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Polarization management for silicon photonic integrated circuits

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TLDR
Polarization management is very important for photonic integrated circuits (PICs) and their applications as mentioned in this paper, however, due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverseelectrical (TE) and transverse-magnetic (TM) modes are generally different.
Abstract
Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Journal ArticleDOI

On-chip polarization splitter based on a multimode plasmonic waveguide

TL;DR: In this paper, a bending multimode plasmonic waveguide with low insertion losses is numerically and experimentally realized, and the operation bandwidth of the proposed waveguide is as large as 430nm because there is no resonance or interference effect in the splitting process.
Journal ArticleDOI

Zero-birefringence silicon waveguides based on tilted subwavelength metamaterials

TL;DR: In this paper, a tilted subwavelength waveguide is proposed to provide anisotropy control of the resulting metamaterial, which is readly adaptable to a wide range of waveguide sizes.
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Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide.

TL;DR: A plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide is proposed and its optical modulation ability for both the vertical and horizontal polarized guiding light is investigated by tuning electro-absorption of ITO with the field-induced carrier injection.
Journal ArticleDOI

Polarization-Independent Black-Phosphorus Polarizer in Visible Regime

TL;DR: In this article, the authors proposed a black-phosphorous (BP) TE- and TM-pass polarizers whose polarization state can be controlled using strong in-plane anisotropic property of BP.
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Prospects and applications of on-chip lasers

TL;DR: In this paper , the state-of-the-art in different aspects of application-driven on-chip silicon lasers is discussed from device-level and system-wide points of view.
References
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Journal ArticleDOI

The Past, Present, and Future of Silicon Photonics

TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
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Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
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Recent progress in lasers on silicon

TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
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Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
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