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Polarization management for silicon photonic integrated circuits

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TLDR
Polarization management is very important for photonic integrated circuits (PICs) and their applications as mentioned in this paper, however, due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverseelectrical (TE) and transverse-magnetic (TM) modes are generally different.
Abstract
Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Citations
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Journal ArticleDOI

Towards heterogeneous integration of optical isolators and circulators with lasers on silicon [Invited]

TL;DR: In this paper, an optical isolator operating for TE mode with 25 dB of isolation, 6.5 dB of insertion loss, and tunability over 40nm is demonstrated and a path towards integrating this isolator with the heterogeneous silicon/III-V laser is described.
Journal ArticleDOI

Wide-band polarization controller for Si photonic integrated circuits.

TL;DR: A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform and was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.
Journal ArticleDOI

Compact Polarization Beam Splitter for Silicon-Based Slot Waveguides Using an Asymmetrical Multimode Waveguide

TL;DR: In this paper, a compact polarization beam splitter (PBS) for silicon-based slot waveguides is proposed, where an asymmetrical multimode waveguide (AMW), cut by a right angle at one corner, is employed to efficiently separate the TE and TM modes.
Journal ArticleDOI

Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer

TL;DR: The present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively, and has a length of ∼2 μm for the coupling region.
Journal ArticleDOI

Ultra-Broadband Polarization Splitter-Rotator Based on the Mode Evolution in a Dual-Core Adiabatic Taper

TL;DR: In this paper, a polarization splitter-rotator (PSR) based on the supermode evolution in a dual-core adiabatic taper with multiple segments is designed.
References
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Journal ArticleDOI

The Past, Present, and Future of Silicon Photonics

TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Journal ArticleDOI

Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
Journal ArticleDOI

Recent progress in lasers on silicon

TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
Journal ArticleDOI

Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
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