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Journal ArticleDOI

Polarization management for silicon photonic integrated circuits

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TLDR
Polarization management is very important for photonic integrated circuits (PICs) and their applications as mentioned in this paper, however, due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverseelectrical (TE) and transverse-magnetic (TM) modes are generally different.
Abstract
Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Citations
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Proceedings ArticleDOI

On-chip polarization handling for silicon nanophotonic integrated circuits

TL;DR: In this paper, a review of the recent work on on-chip polarization handling is reviewed and summarized, including polarization-beam splitters, polarization rotators, as well as polarization splitter rotators.
Journal ArticleDOI

Ultracompact, polarization-independent, and highly scalable optical power splitting model employing fanout bending metamaterials

TL;DR: In this paper , Fan-Out bending subwavelength grating (FBSWG) metamaterials instead of classical straight SWGs are leveraged to expand the input TE/TM mode in an ultracompact region and further bend its wavefronts.
Proceedings ArticleDOI

Polarization Beam Splitter for Silicon-based Cross-slot Waveguides Using an Asymmetrical Evanescent Coupling System

TL;DR: In this paper, a broadband polarization beam splitter (PBS) for the silicon-based cross-slot waveguides (CSWs) is proposed by utilizing a cascaded asymmetrical evanescent coupling system composed of two CSWs and a horizontal slot waveguide (HSW).
Proceedings ArticleDOI

Novel Silicon Polarization Beam Splitter with a Horizontal Hybrid Nanoplasmonic Waveguide

TL;DR: In this article, a low-loss polarization beam splitter with high performance based on a horizontal hybrid nanoplasmonic waveguide is proposed, and the extinction ratios at central wavelength are 21.3 dB and 17.9 dB for TM and TE polarizations.
Proceedings ArticleDOI

An O-Band Silicon Polarization Splitter and Rotator Based on a Bi-level Taper and Cascaded MMI Couplers

TL;DR: In this paper, an O-band silicon PSR based on a bi-level mode-converter and cascaded MMI couplers is presented, which shows an insertion loss less than 0.5dB/0.65dB and crosstalk lower than -14dB/-13dB for TE/TM input polarizations respectively.
References
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Journal ArticleDOI

The Past, Present, and Future of Silicon Photonics

TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Journal ArticleDOI

Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
Journal ArticleDOI

Recent progress in lasers on silicon

TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
Journal ArticleDOI

Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
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