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Polarization management for silicon photonic integrated circuits

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TLDR
Polarization management is very important for photonic integrated circuits (PICs) and their applications as mentioned in this paper, however, due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverseelectrical (TE) and transverse-magnetic (TM) modes are generally different.
Abstract
Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Citations
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Journal ArticleDOI

Experimental demonstration of metamaterial anisotropy engineering for broadband on-chip polarization beam splitting

TL;DR: This work designs, fabrication and experimental characterization of a robust multimode interference polarization beam splitter based on tilted subwavelength gratings that exhibits insertion loss as low as 1 dB, an extinction ratio better than 13 dB in a 120-nm bandwidth, and robust tolerances to fabrication deviations.
Journal ArticleDOI

A Compact Ultrabroadband Polarization Beam Splitter Utilizing a Hybrid Plasmonic Y-Branch

TL;DR: In this article, a hybrid plasmonic Y-branch (HPYB) on a silicon-on-insulator (SOI) platform is proposed and numerically demonstrated.
Journal ArticleDOI

Robust Silicon Waveguide Polarization Rotator With an Amorphous Silicon Overlayer

TL;DR: In this article, the authors proposed a robust polarization rotator based on the mode-evolution mechanism, which is achieved by forming an amorphous silicon (a-Si) overlayer and an SiO2 spacer on top of the waveguide.
Journal ArticleDOI

A Compact Silicon-Based TE-Pass Polarizer Using Three-Guide Directional Couplers

TL;DR: In this article, a symmetrical three-guide directional coupler (DC) is proposed, where two identical hybrid plasmonic waveguides (HPWs) including bends are symmetrically located at both sides of the central SW.
Journal ArticleDOI

Dual-Polarization Second-Order Photonic Topological Insulators

TL;DR: In this paper, a dual-polarization topological photonic crystal structure for both transverse magnetic and transverse electric modes through topology optimization is proposed, and the robustness of these corner states against defects is explicitly demonstrated.
References
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Journal ArticleDOI

The Past, Present, and Future of Silicon Photonics

TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
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Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
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Recent progress in lasers on silicon

TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
Journal ArticleDOI

Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
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