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Polarization management for silicon photonic integrated circuits

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TLDR
Polarization management is very important for photonic integrated circuits (PICs) and their applications as mentioned in this paper, however, due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverseelectrical (TE) and transverse-magnetic (TM) modes are generally different.
Abstract
Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Citations
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Journal ArticleDOI

Polarization splitter and rotator with subwavelength grating for enhanced fabrication tolerance

TL;DR: This work proposes a novel method to implement a compact and fabrication-tolerant polarization splitter and rotator on the silicon-on-insulator platform that has a low TM-to-TE polarization conversion loss, and the use of SWG index engineering improves the waveguide width fabrication tolerance substantially.
Journal ArticleDOI

Enhanced Kerr Nonlinearity and Nonlinear Figure of Merit in Silicon Nanowires Integrated with 2D Graphene Oxide Films.

TL;DR: GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM).
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Review of silicon photonics: history and recent advances

TL;DR: Silicon photonics has attracted tremendous attention and research effort as a promising technology in optoelectronic integration for computing, communications, sensing, and solar harvesting as discussed by the authors, mainly due to the combination of its excellent material properties and the complementary metal-oxide semiconductor fabrication processing technology.
Journal ArticleDOI

Fabrication tolerant and broadband polarization splitter and rotator based on a taper-etched directional coupler.

TL;DR: A fabrication tolerant polarization splitter and rotator on the silicon-on-insulator platform based on the mode-coupling mechanism that can compensate for fabrication inaccuracies and readily integrated in a planar waveguide circuit using e.g. SiO(2) cladding.
Journal ArticleDOI

High Extinction Ratio and Broadband Silicon TE-Pass Polarizer Using Subwavelength Grating Index Engineering

TL;DR: In this paper, a transverse electric (TE)-pass polarizer was implemented on a silicon-on-insulator (SONI) platform and experimentally demonstrated that the measured polarization extinction ratio (ER) was ∼30 dB, and the average insertion loss was 0.4 dB in the wavelength range of 1470-1580 nm.
References
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Journal ArticleDOI

The Past, Present, and Future of Silicon Photonics

TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
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Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
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Recent progress in lasers on silicon

TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
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Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
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