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Journal ArticleDOI

Positioning single atoms with a scanning tunnelling microscope

D. M. Eigler, +1 more
- 01 Apr 1990 - 
- Vol. 344, Iss: 6266, pp 524-526
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TLDR
In this paper, Binnig and Rohrer used the scanning tunnelling microscope (STM) to position individual xenon atoms on a single-crystal nickel surface with atomic pre-cision.
Abstract
SINCE its invention in the early 1980s by Binnig and Rohrer1,2, the scanning tunnelling microscope (STM) has provided images of surfaces and adsorbed atoms and molecules with unprecedented resolution The STM has also been used to modify surfaces, for example by locally pinning molecules to a surface3 and by transfer of an atom from the STM tip to the surface4 Here we report the use of the STM at low temperatures (4 K) to position individual xenon atoms on a single-crystal nickel surface with atomic pre-cision This capacity has allowed us to fabricate rudimentary structures of our own design, atom by atom The processes we describe are in principle applicable to molecules also In view of the device-like characteristics reported for single atoms on surfaces5,6, the possibilities for perhaps the ultimate in device miniaturization are evident

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Citations
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Magnetic field-, strain-, and disorder-induced responses in an energy spectrum of graphene

TL;DR: In this paper, a role of the uniaxial tensile strains and disordered defects in their impact on electronic density of states (DOS) in graphene exposed to an external magnetic field was studied.
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Cantilever contribution to the total electrostatic force measured with the atomic force microscope

TL;DR: In this paper, the electrostatic interaction between a conducting flat surface and horizontal or tilted cantilevers, with and without tips, at various distances from the surface, was investigated and the contribution of the cantilever to the overall force cannot be neglected.
Journal ArticleDOI

Ultrahigh density data storage based on organic materials with SPM techniques

TL;DR: In this paper, recent progress on the developments of ultra-high density data storage based on organic materials is summarized and discussed, it especially focuses on materials for data recording using scanning tunneling microscopy (STM), atom force microscopy, and scanning near-field microscopy(SNOM), and an outlook in this field is also discussed.
Journal ArticleDOI

Tip-state control of rates and branching ratios in atomic manipulation.

TL;DR: The atomic manipulation properties of two distinct, stable, and reproducible states of a scanning tunneling microscope tip applied to chlorobenzene/Si(111)-(7x7) show that the tip state influences the rates of molecular desorption and C-Cl dissociation as well as the branching ratio between these processes, but does not change the mediating electronic channel or the required number of electrons.
Journal ArticleDOI

E-beam manipulation of Si atoms on graphene edges with aberration-corrected STEM

TL;DR: In this paper, the feasibility of controllable motion of dopant Si atoms at the edges of graphene via the sub-atomically focused electron beam in a scanning transmission electron microscope (STEM) was explored.
References
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Journal ArticleDOI

Surface studies by scanning tunneling microscopy

TL;DR: In this paper, surface microscopy using vacuum tunneling has been demonstrated for the first time, and topographic pictures of surfaces on an atomic scale have been obtained for CaIrSn 4 and Au.
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Tunneling through a controllable vacuum gap

TL;DR: In this article, the first successful tunneling experiment with an externally and reproducibly adjustable vacuum gap is reported, based on the exponential dependence of the tunneling resistance on the width of the gap.
Journal ArticleDOI

Atomic-scale surface modifications using a tunnelling microscope

TL;DR: In this paper, an atomic-scale modification of the surface of a nearly perfect germanium crystal, effected by the tungsten tip of a tunnelling microscope, was reported.
Journal ArticleDOI

Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices

In-Whan Lyo, +1 more
- 22 Sep 1989 - 
TL;DR: scanning tunneling microscopy and scanning tunneling spectroscopy are shown that the current-voltage characteristics of a diode configuration consisting of an STM tip over specific sites of a boron-exposed silicon(111) surface exhibit NDR.
Journal ArticleDOI

Molecular manipulation using a tunnelling microscope

TL;DR: The accomplishment of the smallest yet, purposeful, spatially localized changes in matter, effected on a graphite surface is reported, believing that the changes result from the pinning of individual organic molecules to the graphite.