Journal ArticleDOI
Random Telegraph Signal: a local probe for single point defect studies in solid-state devices
Eddy Simoen,Cor Claeys +1 more
TLDR
In this article, the authors provide an overview on Random Telegraph Signals (RTSs) in solid-state devices and more in particular in scaled silicon MOSFETs.Abstract:
This paper provides an overview on Random Telegraph Signals (RTSs) in solid-state devices and more in particular in scaled silicon MOSFETs. It tries to answer the following questions: what is an RTS? How does it behave as a function of the operation conditions (temperature, bias)? And what can we learn from it? It will be shown that when properly analysed, RTS is a sensitive local probe for the study of single defects and their microscopic environment. In this way, new insights into trap dynamics and device physics can be gathered which are relevant for submicron and nano-electronic devices.read more
Citations
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1/f Noise Sources
TL;DR: In this article, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Displacement Damage Effects in Irradiated Semiconductor Devices
J.R. Srour,James W. Palko +1 more
TL;DR: A review of radiation-induced displacement damage effects in semiconductor devices is presented in this paper, with emphasis placed on silicon technology, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells.
Proceedings ArticleDOI
A unified perspective of RTN and BTI
TL;DR: In this paper, the authors show that all defects that contribute to BTI recovery can also become spontaneously charged to produce an RTN event, and that the distribution of step-heights, capture and emission times is equally wide and similar for RTN and BTI.
Proceedings ArticleDOI
Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM
Naoki Tega,Hiroshi Miki,Masanao Yamaoka,Hitoshi Kume,Toshiyuki Mine,Takeshi Ishida,Yuki Mori,Renichi Yamada,Kazuyoshi Torii +8 more
TL;DR: In this paper, the impact of a random telegraph noise (RTN) on a scaled-down SRAM is shown for the first time, and the impact on SRAM margin enclosed by read/write Vth curves with or without RTN is simulated.
Journal ArticleDOI
Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects
Eddy Simoen,Dennis Lin,Alireza Alian,Guy Brammertz,Clement Merckling,Jerome Mitard,Cor Claeys +6 more
TL;DR: The impact of border traps on high-k gate oxides on the operation and reliability of high-mobility channel transistors has been discussed in this article, with particular emphasis on the development of novel or adapted measurement techniques such as AC transconductance dispersion or trap spectroscopy by charge injection and sensing.
References
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Journal ArticleDOI
1/f noise sources
TL;DR: In this paper, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise
K. S. Ralls,W. J. Skocpol,Lawrence D. Jackel,Richard Howard,Linus A. Fetter,R. W. Epworth,Donald M. Tennant +6 more
TL;DR: In this article, the authors studied resistance fluctuation in submicrometer narrow Si inversion layers over a wide range of temperatures and electron concentrations, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps).
1/f Noise Sources
TL;DR: In this article, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal
TL;DR: In this paper, the spectrum is calculated of a random signal which may be in one of two states (YES•NO: random telegraph signal), where the mean lives σ and τ of the two states may be different.
Journal ArticleDOI
Random telegraph noise of deep-submicrometer MOSFETs
TL;DR: The random telegraph noise exhibited by deep submicrometer MOSFETs with very small channel area was studied in this paper, where the authors showed that the random noise can be modelled as a signal-to-noise model.
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Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
M J Kirton,M J Uren +1 more