Journal ArticleDOI
Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
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In this article, the authors achieved room temperature (300°K) operation of Ga(1−x)AlxAs•GaAs double-heterostructure lasers with active layers of quantum-well dimensions ∼200 A thick.Abstract:
The achievement of room‐temperature (300 °K) operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers with active layers of quantum‐well dimensions ∼200 A thick is reported. These devices are grown by metalorganic chemical vapor deposition and exhibit pronounced effects in the spectral and lasing characteristics that are related to the small active region thickness and are the first such effects observed for DH lasers in the GaAlAs‐GaAs system.read more
Citations
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Quantum well lasers--Gain, spectra, dynamics
Yasuhiko Arakawa,Amnon Yariv +1 more
TL;DR: In this article, the authors discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics and reveal that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices.
Journal ArticleDOI
Quantum-well heterostructure lasers
TL;DR: In this paper, the steplike density-of-states of a quantum-well heterostructure can improve the operation of a semiconductor laser, which is explained in terms of the step-like density of states and the disturbed electron and phonon distributions in the quantumwell active regions.
Journal ArticleDOI
Nanowire resonant tunneling diodes
Mikael Björk,B. J. Ohlsson,Claes Thelander,Ann Persson,Knut Deppert,L. R. Wallenberg,Lars Samuelson +6 more
TL;DR: In this article, a functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires are presented.
Journal ArticleDOI
Design of Fabry-Perot surface-emitting lasers with a periodic gain structure
TL;DR: A detailed analysis of a Fabry-Perot surface emitting laser (FP-SEL) which utilizes the recently proposed concept of periodic gain is presented in this paper, where it is shown that close to a factor-of-two reduction in threshold current should be possible; the ideal reduction of a factor of two is only limited by the internal loss of the cavity.
Journal ArticleDOI
Low-Threshold Stimulated Emission Using Colloidal Quantum Wells
Chunxing She,Igor Fedin,Dmitriy S. Dolzhnikov,Arnaud Demortière,Arnaud Demortière,Richard D. Schaller,Richard D. Schaller,Matthew Pelton,Matthew Pelton,Dmitri V. Talapin,Dmitri V. Talapin +10 more
TL;DR: It is shown that colloidal nanoplatelets produce amplified spontaneous emission with thresholds as low as 6 μJ/cm(2) and gain as high as 600 cm(-1), both a significant improvement over colloidal nanocrystals.
References
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Journal ArticleDOI
Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures
TL;DR: In this article, optically pumped laser oscillation from multilayer heterostructures consisting of alternating layers of GaAs and Al0.2Ga0.8As was reported.
Journal ArticleDOI
Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
R. D. Dupuis,P. D. Dapkus +1 more
TL;DR: In this paper, the authors achieved threshold current densities as low as 1.2 kA/cm2 in totally internally reflecting devices and 3kA/m2 in broad-area Fabry-Perot diodes.
Journal ArticleDOI
LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
E. A. Rezek,Nick Holonyak,Bruce A. Vojak,G. E. Stillman,J. A. Rossi,D. L. Keune,J. D. Fairing +6 more
TL;DR: In this paper, a liquid phase-epitaxial (LPE) double-heterojunction (DH) laser structure with an ∼ 1μm active region consisting of ≳20 In1−xGaxP1−zAsz and InP lattice matched thin layers is described.
Journal ArticleDOI
High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition
TL;DR: In this article, high efficiency GaAlAs/GaAs heterostructure solar cells have been grown by metalorganic chemical vapor deposition (MO−CVD) and simulated air-mass-zero (AM0) short-circuit current densities of 24.5 mA/cm2, opencircuit voltages of 0.99 V, fill factors and efficiencies of 12.8% have been measured on devices without AR coatings (uncorrected for contact area).
Journal ArticleDOI
Ga1−x Alx As superlattices profiled by Auger electron spectroscopy
TL;DR: In this paper, a superlattice structure made by molecular beam epitaxy is profiled by a combined technique of argon sputter etching and Auger electron spectroscopy.