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Journal ArticleDOI

Semiconducting amorphous carbon films and carbon-single-crystal silicon heterojunctions

G.K. Bhagavat, +1 more
- 15 Nov 1979 - 
- Vol. 64, Iss: 1, pp 57-62
TLDR
In this article, a photovoltaic output of 280 mV under Air Mass 1 conditions and a rectification ratio of the order of hundreds was achieved by depositing carbon onto single-crystal silicon.
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This article is published in Thin Solid Films.The article was published on 1979-11-15. It has received 13 citations till now. The article focuses on the topics: Carbon film & Amorphous carbon.

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Citations
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Journal ArticleDOI

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

TL;DR: The physics of band alignment, the chemistry of surface modification and the behavior of photoexcited charge transfer at the interface during PV and PEC processes will be discussed and possible strategies to improve their performance are discussed.
Journal ArticleDOI

Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects.

TL;DR: The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene-based photodevices for a wide range of applications.
Journal ArticleDOI

The graphene–semiconductor Schottky junction

Xinming Li, +1 more
- 31 Aug 2016 - 
TL;DR: When a two-dimensional material abuts a three-dimensional one, a century-old electrical phenomenon finds new applicability as mentioned in this paper, where a twodimensional material is replaced by a 3D one.
Journal ArticleDOI

A carbonaceous thin film made by CVD and its application for a carbon/N-type silicon (C/N-SI) photovoltaic cell

TL;DR: Carbon materials have found many applications in chemical, mechanical, biological, and electrical fields because of their superior properties as discussed by the authors, however, the carbon materials have not been used as yet as electronic materials in microelectronic devices.
Journal ArticleDOI

Metal-insulator transition in highly disordered carbon fibers

TL;DR: In this article, the electronic transition from localized to delocalized states of carriers in a disordered carbon material is investigated by photoconductivity measurements, and the transition temperature was determined to be rather low, around 1000 °C, considering the rapid decrease in the photoconductivities above this temperature.
References
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Journal ArticleDOI

Evaporated carbon films for use in electron microscopy

TL;DR: In this paper, a method for producing carbon films suitable for electron microscope specimen supports was developed, where carbon is evaporated on to an extremely soluble substrate, which is dissolved away leaving very thin films.
Journal ArticleDOI

Heterojunction solar cells of SnO2/Si

TL;DR: In this paper, the electron affinity of the SnO2 films was shown to be approximately 0.8 eV greater than the electron affinities of the Si, which is consistent with the electron-hole recombination in the transition region.
Journal ArticleDOI

Characteristic Energy Losses of Electrons in Carbon

TL;DR: In this paper, the electron energy losses have been remeasured for evaporated carbon and natural graphite, and it was found that there is a large difference for these two forms of carbon.
Journal ArticleDOI

Switching phenomena in amorphous carbon

TL;DR: In this paper, it was shown that the switching with memory in carbon is a purely electronic phenomenon, and the switching effect in carbon was found to differ in many respect from that in glasses and semiconductors.
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