Silicon nitride gate dielectrics and band gap engineering in graphene layers.
Reads0
Chats0
TLDR
It is shown that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility and the field-induced band gap or band overlap in the different layers.Abstract:
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.read more
Citations
More filters
Journal ArticleDOI
Graphene: electronic and photonic properties and devices.
TL;DR: The electronic structure, transport and optical properties of graphene are discussed, and how these are utilized in exploratory electronic and optoelectronic devices.
Journal ArticleDOI
Hysteresis in single-layer MoS2 field effect transistors.
TL;DR: Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.
Journal ArticleDOI
Graphene: Synthesis and applications
TL;DR: Graphene has been attracting enormous attention in the scientific community as discussed by the authors, since the demonstration of its easy isolation by the exfoliation of graphite in 2004 by Novoselov, Geim and co-workers.
Journal ArticleDOI
Graphene: An Emerging Electronic Material
Nathan O. Weiss,Hailong Zhou,Lei Liao,Yuan Liu,Shan Jiang,Yu Huang,Yu Huang,Xiangfeng Duan,Xiangfeng Duan +8 more
TL;DR: The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies.
Journal ArticleDOI
Temperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS2
TL;DR: In this paper, the temperature dependence of in-plane E2g and out-of-plane A1g Raman modes in high-quality few-layer MoS2 (FLMS) prepared using a high-temperature vapor phase method was investigated using transmission electron microscopy.
References
More filters
Journal ArticleDOI
The electronic properties of graphene
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Journal ArticleDOI
Fine Structure Constant Defines Visual Transparency of Graphene
Rahul R. Nair,Peter Blake,Peter Blake,Alexander N. Grigorenko,K. S. Novoselov,Timothy J. Booth,Timothy J. Booth,Tobias Stauber,Tobias Stauber,Nuno M. R. Peres,Nuno M. R. Peres,A. K. Geim +11 more
TL;DR: It is shown that the opacity of suspended graphene is defined solely by the fine structure constant, a = e2/hc � 1/137 (where c is the speed of light), the parameter that describes coupling between light and relativistic electrons and that is traditionally associated with quantum electrodynamics rather than materials science.
Journal ArticleDOI
Ultrahigh electron mobility in suspended graphene
Kirill I. Bolotin,K. J. Sikes,Zhigang Jiang,Martin Klima,Geoffrey Fudenberg,James Hone,Philip Kim,Horst Stormer,Horst Stormer +8 more
TL;DR: In this paper, a single layer graphene was suspended ∼150nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching.
Journal ArticleDOI
Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
TL;DR: A chemical route to produce graphene nanoribbons with width below 10 nanometers was developed, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics.
Journal ArticleDOI
Direct observation of a widely tunable bandgap in bilayer graphene
Yuanbo Zhang,Tsung-Ta Tang,Tsung-Ta Tang,Caglar Girit,Zhao Hao,Michael C. Martin,Alex Zettl,Alex Zettl,Michael F. Crommie,Michael F. Crommie,Y. Ron Shen,Y. Ron Shen,Feng Wang,Feng Wang +13 more
TL;DR: This work demonstrates a gate-controlled, continuously tunable bandgap of up to 250 meV and suggests novel nanoelectronic and nanophotonic device applications based on graphene that have eluded previous attempts.