Proceedings ArticleDOI
Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs
Ashish Kumar,Sanket Parashar,Jayant Baliga,Subhashish Bhattacharya +3 more
- pp 2737-2742
TLDR
In this paper, the avalanche ruggedness of 10kV, 10A 4H-SiC MOSFETs is established experimentally using single shot unclamped inductive switching.Abstract:
Higher switching frequency capability and lower switching loss associated with 10kV 4H-SiC MOSFETs make them attractive for medium voltage applications, mostly in inductive circuits e.g. solid state transformers, grid connectors and high speed machine drives. Due to exposure to inductive circuits, avalanche ruggedness of these MOSFETs needs to be established to improve their reliability in case of unintended unclamped inductive switching. In this paper, the avalanche ruggedness of 10kV, 10A 4H-SiC MOSFETs is established experimentally using single shot unclamped inductive switching. The minimum and the maximum energy is found out for the MOSFET to remain in avalanche without being failed permanently. The junction temperature at the permanent failure is estimated using semiconductor device physics.read more
Citations
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Journal ArticleDOI
Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High $dv/dt$
TL;DR: In this article, a gate driver for mediumvoltage (MV) SiC devices is proposed, which has low input common mode current and a short-circuit protection scheme specifically designed for 10-kV SiC mosfet s.
Journal ArticleDOI
Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfet s Under Avalanche Conditions
Xiaochuan Deng,Hao Zhu,Xuan Li,Xing Tong,Gao Shufeng,Yi Wen,Bai Song,Wanjun Chen,Kun Zhou,Bo Zhang +9 more
TL;DR: In this article, the authors investigated the failure mechanisms of asymmetric and double trench SiC mosfet transistors under single-pulse unclamped inductive switching (UIS) stress.
Journal ArticleDOI
Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET
Xuan Li,Xing Tong,Rui Hu,Yi Wen,Hao Zhu,Xiaochuan Deng,Yongkui Sun,Wanjun Chen,Song Bai,Bo Zhang +9 more
TL;DR: In this paper, an avalanche safe operation area (SOA) is established, and a new failure behavior of 1200-V double trench SiC MOSFET is revealed timely through unclamped inductive switching (UIS) test (300 K of initial temperature).
Proceedings ArticleDOI
High Power Medium Voltage Converters Enabled by High Voltage SiC Power Devices
TL;DR: The potential application examples of Solid State Transformer, Asynchronous Microgrid Power Conditioning Systems, MV motor drives, MV grid connected converters for integration of Distributed Renewable Energy Resources and Distributed Energy Storage Devices are presented.
Proceedings ArticleDOI
A Novel Gate Driver for Active Voltage Balancing in 1.7kV Series Connected SiC MOSFETs
TL;DR: In this article, an active voltage balancing method for series connected 1.7 kV SiC MOSFETs was proposed to reduce the voltage mismatch and voltage spike due to di/dt.
References
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Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Proceedings ArticleDOI
Silicon carbide power device development for industrial markets
TL;DR: The 4H-SiC MOSFET with a specific on-resistance (R ON,SP ) of 5 mΩcm2 for a 1200 V rating was reported in this article.
Journal ArticleDOI
Dynamics of power MOSFET switching under unclamped inductive loading conditions
K. Fischer,Krishna Shenai +1 more
TL;DR: In this paper, the authors used unclamped inductive switching (UIS) tests to examine the reliability of DMOSFET's in extremely harsh switching conditions and showed that premature open base bipolar transistor breakdown can occur when the p-base sheet resistance is high.
Journal ArticleDOI
SiC power MOSFETs performance, robustness and technology maturity
TL;DR: A review of commercial SiC power MOSFETs state-of-the-art characteristics is proposed and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics.