Proceedings ArticleDOI
Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters
Sachin Madhusoodhanan,Awneesh Tripathi,Dhaval Patel,Krishna Mainali,Arun Kadavelugu,Samir Hazra,Subhashish Bhattacharya,Kamalesh Hatua +7 more
- pp 1626-1633
TLDR
In this article, a transformerless Intelligent Power Substation (TIPS) is proposed as a 3-phase SST interconnecting 13.8 kV distribution grid with 480 V utility grid.Abstract:
Recently, medium voltage SiC devices have been developed which can be used for grid tie applications at medium voltage. Two such devices - 15 kV SiC IGBT and 10 kV SiC MOSFET have opened up the possibility of looking into different converter topologies for medium voltage distribution grid interface. These can be used in medium voltage drives, active filter applications or as the active front end converter for Solid State Transformers (SST). Transformer-less Intelligent Power Substation (TIPS) is one such application for these devices. TIPS is proposed as a 3-phase SST interconnecting 13.8 kV distribution grid with 480 V utility grid. The Front End Converter (FEC) of TIPS is made up of 15 kV SiC IGBTs. This paper focuses on the advantages, design considerations and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference.read more
Citations
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Proceedings ArticleDOI
Characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs
TL;DR: In this paper, the authors performed static and dynamic performance characterization of latest generation 900-V and 1.2-kV discrete Silicon Carbide (SiC) MOSFETs from four well-known manufacturers: CREE, ROHM, General Electric (GE) and Sumitomo Electric Industries (SEI).
Proceedings ArticleDOI
MVDC microgrids enabled by 15kV SiC IGBT based flexible three phase dual active bridge isolated DC-DC converter
Awneesh Tripathi,Krishna Mainali,Sachin Madhusoodhanan,Dhaval Patel,Arun Kadavelugu,Samir Hazra,Subhashish Bhattacharya,Kamalesh Hatua +7 more
TL;DR: In this paper, a dual active bridge (DABC) dc-dc converter is proposed for medium voltage and medium frequency (MF) dc micro-grid applications with duty-ratio control of the primary and the independent operation of dual secondary bridges as a single active bridge.
Journal ArticleDOI
Mission Critical Analysis and Design of IGBT-based Power Converters Applied to Mine Hoist Systems
Victor N. Ferreira,Gabriel Alves Mendonca,Anderson V. Rocha,Robson Silva Resende,Braz de Jesus Cardoso Filho +4 more
TL;DR: In this article, the authors proposed a mission critical analysis and design methodology for power converters in order to achieve proper reliability of the hoist drive system, since the failure of power devices is responsible for a significant portion of the total downtime of power converter.
Proceedings ArticleDOI
A Computational Efficient Space-Vector Modulation Scheme for A Hybrid Seven-Level Converter for Medium Voltage Grid-Tied Applications
TL;DR: A fast space-vector modulation (SVM) scheme is proposed for a hybrid 7-level (7-L) converter, i.e., cascaded T-type converter and H-bridge converters, for grid-tied applications to significantly reduce the computational cost.
Proceedings ArticleDOI
Control of active front-end rectifier of the solid-state transformer with improved dynamic performance during precharging
Hossein Dehghani Tafti,Cao Shuyu,K. V. Ravi Kishore,Ghias Farivar,Howe Li Yeo,V. B. Sriram,Josep Pou,Anshuman Tripathi +7 more
TL;DR: The control of the active front-end rectifier of the three-stage solid-state transformer (SST) system is addressed and the ability of the proposed algorithm to limit the converter current to its nominal value during the precharging as well as to control the dc-link voltage under different load changes is shown.
References
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Journal ArticleDOI
Multilevel Voltage-Source-Converter Topologies for Industrial Medium-Voltage Drives
TL;DR: This paper covers the high-power voltage-source inverter and the most used multilevel-inverter topologies, including the neutral-point-clamped, cascaded H-bridge, and flying-capacitor converters.
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Proceedings ArticleDOI
Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters
Arun Kadavelugu,Subhashish Bhattacharya,Sei-Hyung Ryu,Edward Van Brunt,David Grider,Anant K. Agarwal,Scott Leslie +6 more
TL;DR: In this article, the performance of the 15 kV n-IGBT has been evaluated up to 11 kV. This is the highest switching characterization voltage ever reported on a single power semiconductor device.
Journal ArticleDOI
Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters
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