Journal ArticleDOI
Stacked pentacene layer organic thin-film transistors with improved characteristics
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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.Abstract:
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.read more
Citations
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Journal ArticleDOI
Ambipolar transport in solution-deposited pentacene transistors enhanced by molecular engineering of device contacts
TL;DR: In this article, the authors reported ambipolar transport in bottom gold contact, pentacene field effect transistors (FETs) fabricated by spin-coating and thermally converting its precursor on a benzocyclobutene/SiO2 gate dielectric with chemically modified source and drain electrodes.
Journal ArticleDOI
Organic Field-effect Transistor Based on Biphenyl Substituted TTF
Bunpei Noda,Mao Katsuhara,Isao Aoyagi,Takehiko Mori,Tomohiro Taguchi,Takuya Kambayashi,Ken Ishikawa,Hideo Takezoe +7 more
TL;DR: In this paper, DBP-TTF (bis(biphenyl)tetrathiafulvalene) is used as an active layer of an organic field effect transistor.
Journal ArticleDOI
C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition
TL;DR: In this article, the performance of C60 thin-film field effect transistors on SiO2 substrates fabricated by molecular beam deposition was reported and characterized under high vacuum without exposing to air, which showed current on/off ratios >108 and field effect mobility in the range of 0.5-0.3 cm2/V s.
Journal ArticleDOI
Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors
TL;DR: In this paper, the authors examined bilayer source-drain electrodes for organic thin-film transistors (OTFTs), where a p-type metal oxide layer was inserted between the pentacene layer and the Au layer, and the field-effect mobility of the device with the CuO (10 nm)/Au (50 nm) bilayer electrodes was 0.34 (± 0.04) cm 2 /V s.
Journal ArticleDOI
Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator
TL;DR: Using double-layer of insulator and modified electrode is an effective way to improve OTFT performance, and it is found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO"2, surface energy of SiO'2 gate dielectric is reduced and the device performance has been improved significantly.
References
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Journal ArticleDOI
Organic transistors: two-dimensional transport and improved electrical characteristics.
TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI
Pentacene organic thin-film transistors-molecular ordering and mobility
TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI
Pentacene-based organic thin-film transistors
TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.