Journal ArticleDOI
Stacked pentacene layer organic thin-film transistors with improved characteristics
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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.Abstract:
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.read more
Citations
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Journal ArticleDOI
Interface formation and energy level alignment of pentacene on SiO2
Neil J. Watkins,Yongli Gao +1 more
TL;DR: In this article, the authors examined the interface formed by pentacene deposition onto a SiO2 substrate and observed the immediate appearance of the highest occupied molecular orbital upon deposition of as little as 2 A on the SiO 2 surface.
Journal ArticleDOI
InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers
TL;DR: In this paper, self-assembled monolayers (SAMs) were used to improve the mobility and electrical stability of InGaZnO (IGZO) thin-film transistors.
Journal ArticleDOI
Efficient synthesis of thieno[3,2-b:4,5-b']diindoles and benzothieno[3,2-b]indoles by Pd-catalyzed site-selective C-C and C-N coupling reactions.
TL;DR: Heteroacenes (thieno[3,2-b:4,5-b']diindoles and benzothieno [3, 2-b]indoles) were efficiently synthesized from tetrabromothiophene and 2,3-dibromobenzothsiophene in two steps, respectively.
Journal ArticleDOI
Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere
TL;DR: In this article, the authors used a heterostructure of pentacene/C60 in which the C60 layer functioned as an n-type channel and a sealing capsule for the unstable c60 layer.
Journal ArticleDOI
N-channel organic field-effect transistors using N,N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and a polymeric dielectric
TL;DR: In this article, an organic field effect transistor was fabricated using N,N′-ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide (PTCDI-C13H27) active material and a polymeric insulator polymethylmethacrylate (PMMA) as the gate dielectric.
References
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Journal ArticleDOI
Organic transistors: two-dimensional transport and improved electrical characteristics.
TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI
Pentacene organic thin-film transistors-molecular ordering and mobility
TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI
Pentacene-based organic thin-film transistors
TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.