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Journal ArticleDOI

Stacked pentacene layer organic thin-film transistors with improved characteristics

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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.
Abstract
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.

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Citations
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Journal ArticleDOI

Three-dimensional organic field-effect transistors : Charge accumulation in the vertical semiconductor channels

TL;DR: In this article, a multicolumnar structure incorporating a vertical layer of soluble benzothieno-benzothiophene derivative is developed to accumulate charge in its vertical semiconductor channel so that space availability for the fieldinduced carriers is essentially multiplied.
Journal ArticleDOI

A lithographic process for integrated organic field-effect transistors

TL;DR: In this article, a multilayer integrated photolithographic process was used to create organic field effect transistors suitable for use in integrated circuit applications such as a display backplanes, which achieved field effect mobility of 0.1/spl plusmn/0.05 cm/sup 2/(V/spl middot/s).
Patent

Surface modified organic thin film transistors

TL;DR: An organic thin-film transistor is a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer as mentioned in this paper, which is a product of a reaction between the gate dielexric and a precursor.
Patent

Process for preparing pentacene derivatives

TL;DR: A process for preparing substituted pentacene compounds comprises the step of cyclizing substituted bis(benzyl)phthalic acids using an acid composition comprising trifluoromethanesulfonic acid as discussed by the authors.
Journal ArticleDOI

Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions

TL;DR: In this paper, a double layer pentacene-C60 heterojunction was used as the semiconductor layer for the realization of fully flexible and transparent n-type and ambipolar all-organic OFETs.
References
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Journal ArticleDOI

Organic transistors: two-dimensional transport and improved electrical characteristics.

TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI

Pentacene organic thin-film transistors-molecular ordering and mobility

TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI

Molecular beam deposited thin films of pentacene for organic field effect transistor applications

TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI

Pentacene-based organic thin-film transistors

TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.
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