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Stacked pentacene layer organic thin-film transistors with improved characteristics
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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.Abstract:
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.read more
Citations
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Molecular orientation and film morphology of pentacene on native silicon oxide surface.
TL;DR: A plausible explanation was proposed for the discrepancy between the HREELS-indicated and the XRD-derived molecular orientations, which may have significant implication on the performance of electronic devices based on pentacene thin films.
Journal ArticleDOI
Air-stable and high-mobility organic semiconductors based on heteroarenes for field-effect transistors
TL;DR: In this article, molecular factors (molecular structures, energy levels and shapes of highest occupied molecular orbitals, molecular arrangements in the thin film) and the device performances are correlated and discussed to understand a structure-properties relationship.
Journal ArticleDOI
Influence of self-assembled monolayer chain length on modified gate dielectric pentacene thin-film transistors
TL;DR: In this paper, the influence of the thickness of the self-assembled monolayer, via the alkyl chain length in n-alkyl phosphonic acid-based monolayers on SiO2, on the electronic properties of pentacene-based organic thin-film transistors was investigated.
Journal ArticleDOI
Nucleation and Growth of Perfluoropentacene on Self-Assembled Monolayers: Significant Changes in Island Density and Shape with Surface Termination
TL;DR: In this article, the nucleation and growth of perfluoropentacene (PFP) on SiO2 and on a variety of surfaces possessing different terminating self-assembled-monolayers (SAMs) using in situ synchrotr
Journal ArticleDOI
An Improved Synthesis of Pentacene: Rapid Access to a Benchmark Organic Semiconductor
TL;DR: With this improved synthesis, researchers gain rapid, affordable access to high purity pentacene in excellent yield and without the need for a time consuming sublimation.
References
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Journal ArticleDOI
Organic transistors: two-dimensional transport and improved electrical characteristics.
TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
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Pentacene organic thin-film transistors-molecular ordering and mobility
TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI
Pentacene-based organic thin-film transistors
TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.