Journal ArticleDOI
Stacked pentacene layer organic thin-film transistors with improved characteristics
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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.Abstract:
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.read more
Citations
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Electronic Properties of Pentacene versus Triisopropylsilylethynyl-Substituted Pentacene: Environment-Dependent Effects of the Silyl Substituent
TL;DR: The relation between the gas phase and solid phase UPS measurements illustrated here provides a general approach to investigating the electronic effects acting on molecules in the condensed phase, which in this case are greater than the direct substituent electronic effects within the molecule.
Journal ArticleDOI
High performance organic semiconducting thin films: Ink jet printed polythiophene [rr-P3HT]
Stuart Speakman,Stuart Speakman,Gregor G. Rozenberg,KJ Clay,William I. Milne,Adelina Ille,Ian Andrew Patterning Technologies Ltd. Gardner,Eric Bresler,Joachim H. G. Steinke +8 more
TL;DR: In this article, a piezoelectric ink jet (IJ) was used to print regioregular poly (3-hexylthiophene-2,5-diyl) [ rr -P3HT] semiconducting films directly patterned on to gold thin film contact surfaces.
Journal ArticleDOI
Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface
TL;DR: In this paper, the influence of H2O and O2 on the transistor characteristics in p-and n-type organic thin-film transistors (OTFTs) fabricated on the SiO2 gate insulator was investigated.
Journal ArticleDOI
General Synthesis of Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) Derivatives
TL;DR: Newly developed derivatives of DNTT showed very high field effect mobility in the vapor-processed field-effect transistors up to 8 cm(2) V(-1) s(-1).
Journal ArticleDOI
Benzo[1,2-b:4,5-b']bis[b]benzothiophene as solution processible organic semiconductor for field-effect transistors.
Peng Gao,Dirk Beckmann,Hoi Nok Tsao,Xinliang Feng,Volker Enkelmann,Wojciech Pisula,Klaus Müllen +6 more
TL;DR: Coplanar benzo[1,2-b:4,5-b']bis[b]benzothiophenes (, ) for the application in organic field-effect transistors were synthesized by a simple two-step procedure involving triflic acid induced ring-closure reaction.
References
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Journal ArticleDOI
Organic transistors: two-dimensional transport and improved electrical characteristics.
TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI
Pentacene organic thin-film transistors-molecular ordering and mobility
TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI
Pentacene-based organic thin-film transistors
TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.