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Stacked pentacene layer organic thin-film transistors with improved characteristics

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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.
Abstract
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.

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Citations
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Journal ArticleDOI

Ubiquitous pentacene monolayer on metals deposited onto pentacene films.

TL;DR: It is concluded that approximately one monolayer of pentacene is always present on top of the freshly deposited metal film, which explains the very low work function of the metals when they are deposited onto organic films.

Spatially resolved electronic and optoelectronic measurements of pentacene thin film transistors

TL;DR: In this paper, the authors present a model of Pentacen-Dunnfilmtransistoren, in which the Schwellwertspannung and Hysterese of Transistorkanals are investigated.
Patent

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

TL;DR: In this paper, an organic semiconductor device including a liquid crystal molecule is described, in which a phase having no periodic regularity at a location of a center of gravity in between the liquid crystal molecules is a nematic liquid crystal phase.
Patent

Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof

TL;DR: In this paper, two or more kinds of materials are adopted to form the active semiconductor layer to make the active layer good contact with the source/drain electrode more effectively and reduce the threshold voltage of the device.
Journal ArticleDOI

Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

TL;DR: In this article, a high-resolution microscopic gate-modulation imaging (μ-GMI) technique is successfully developed to visualize inhomogeneous charge and electric field distributions in operating organic thin-film transistors (TFTs).
References
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Journal ArticleDOI

Organic transistors: two-dimensional transport and improved electrical characteristics.

TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI

Pentacene organic thin-film transistors-molecular ordering and mobility

TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI

Molecular beam deposited thin films of pentacene for organic field effect transistor applications

TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI

Pentacene-based organic thin-film transistors

TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.
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