Journal ArticleDOI
Stacked pentacene layer organic thin-film transistors with improved characteristics
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TLDR
In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.Abstract:
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.read more
Citations
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High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors
Chikahiko Mitsui,Hiroaki Tsuyama,Ryoji Shikata,Yoshinori Murata,Hiroyuki Kuniyasu,Masakazu Yamagishi,Hiroyuki Ishii,Akito Yamamoto,Yuri Hirose,Masafumi Yano,Tsunayoshi Takehara,Takeyuki Suzuki,Hiroyasu Sato,Akihito Yamano,Eiji Fukuzaki,Watanabe Tetsuya,Yoshihisa Usami,Jun Takeya,Toshihiro Okamoto,Toshihiro Okamoto +19 more
TL;DR: In this paper, a new class of solution-processable thieno[3,2-f:4,5-f′]bis[1]benzothiophene (TBBT-V) semiconductors are investigated.
Journal ArticleDOI
Flux dependence of the morphology of a tetracene film on hydrogen-passivated Si(100)
TL;DR: In this article, the initial stage of vacuum evaporated tetracene films on hydrogen-passivated Si(100) substrates was investigated using ex situ atomic force microscopy.
Journal ArticleDOI
MAPLE-deposited polymer films for improved organic device performance
TL;DR: In this paper, the authors presented optical and electrical studies of MAPLE-deposited polyfluorene (PF) and polythiophene films in FETs and MIS structures.
Journal ArticleDOI
Energy level alignment at the interfaces between typical electrodes and nucleobases: Al/adenine/indium-tin-oxide and Al/thymine/indium-tin-oxide
TL;DR: In this paper, the interfacial electronic structures of Al/adenine/indium-tinoxide (ITO) and Al/thymine/ITO using in situ ultraviolet and x-ray photoemission spectroscopy and density functional theory calculations were investigated.
Journal ArticleDOI
Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane.
TL;DR: In this work, the depositions from the gas phase and from solution are compared, and both approaches resulted in similar transistor characteristics, i.e., similar values of shift in the threshold and turn-on voltage as well as mobility, ION/ IOFF ratio and amount of introduced free charge carriers.
References
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Journal ArticleDOI
Organic transistors: two-dimensional transport and improved electrical characteristics.
TL;DR: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors and optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106.
Journal ArticleDOI
Pentacene organic thin-film transistors-molecular ordering and mobility
TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Journal ArticleDOI
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
Journal ArticleDOI
Pentacene-based organic thin-film transistors
TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.