scispace - formally typeset
Journal ArticleDOI

Statistical Compact Model Extraction: A Neural Network Approach

TLDR
ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters.
Abstract
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.

read more

Citations
More filters
Journal ArticleDOI

Statistical compact model extraction for skew-normal distributions

TL;DR: A technique to extract statistical model parameters for skewed Gaussian process variations is proposed and results show that the extracted parameters, when simulated, match the performance parameter targets to within 3% for both Gaussian and skewed process variations.
Journal ArticleDOI

Parasitic $RC$ Aware Delay Corner Model for Sub-10-nm Logic Circuit Design

TL;DR: The delay variations predicted by the proposed model match well with the Monte Carlo simulation results at various simulation conditions, unlike the conventional corner model, which introduces pessimism.
Book ChapterDOI

Statistical Compact Model Extraction for Skewed Gaussian Variations

TL;DR: A technique for extracting Statistical Compact Model parameters for skewed Gaussian parameters is proposed by setting up a skewed back propagation of variance (SBPV) algorithm and analytical expressions for the statistics of the skewedGaussian process and performance parameters are derived.
Proceedings ArticleDOI

About IEEE Bangalore Section

TL;DR: In this paper , the authors summarized activities and initiatives taken by IEEE Bangalore section during the year 2012, and presented a survey of IEEE Bangalore Section activities and their initiatives for the year 2013.
References
More filters
Journal ArticleDOI

Multilayer feedforward networks are universal approximators

TL;DR: It is rigorously established that standard multilayer feedforward networks with as few as one hidden layer using arbitrary squashing functions are capable of approximating any Borel measurable function from one finite dimensional space to another to any desired degree of accuracy, provided sufficiently many hidden units are available.
Book ChapterDOI

Neural Networks for Pattern Recognition

TL;DR: The chapter discusses two important directions of research to improve learning algorithms: the dynamic node generation, which is used by the cascade correlation algorithm; and designing learning algorithms where the choice of parameters is not an issue.
Proceedings ArticleDOI

Full-chip analysis of leakage power under process variations, including spatial correlations

TL;DR: The proposed method for analyzing the leakage current, and hence the leakage power, of a circuit under process parameter variations that can include spatial correlations due to intra-chip variation is presented.
Journal ArticleDOI

Statistical Compact Model Parameter Extraction by Direct Fitting to Variations

TL;DR: In this article, a statistical compact model parameter extraction method is proposed and described in detail, where the target of fitting is not the individual transistor, but statistically analyzed results (more specifically, principal components) of measured data.
Journal ArticleDOI

Analytical yield prediction considering leakage/performance correlation

TL;DR: A new chip-level statistical method to estimate the total leakage current in the presence of within-die and die-to-die variability is presented and an integrated approach to accurately estimate the yield loss when both frequency and power limits are imposed on a design is presented.