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Journal ArticleDOI

Statistical Compact Model Extraction: A Neural Network Approach

TLDR
ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters.
Abstract
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.

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Citations
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Journal ArticleDOI

Prediction of Process Variation Effect for Ultrascaled GAA Vertical FET Devices Using a Machine Learning Approach

TL;DR: An accurate and efficient machine learning (ML) approach which predicts variations in key electrical parameters using process variations (PVs) from ultrascaled gate-all-around (GAA) vertical FET (VFET) devices with the same degree of accuracy, as well as improved efficiency compared to a 3-D stochastic TCAD simulation.
Journal ArticleDOI

Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics

TL;DR: This letter shows an important role in filling the gap between the emerging device proposal and the development of the SPICE model and the results are compared with a general linear model (GLM).
Proceedings ArticleDOI

Analysis on Process Variation Effect of 3D NAND Flash Memory Cell through Machine Learning Model

TL;DR: This work investigated process variation effect of 3D NAND flash memory cell, especially about geometric variation using a machine learning (ML) model, which has multi-input and multi-output (MIMO) structure and deep hidden layers to train and predict complex data of process variation.
Journal ArticleDOI

Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition

Bokyeom Kim, +1 more
- 01 Jan 2021 - 
TL;DR: In this paper, the effective stopping condition (ESC) for Bayesian optimization of MOSFET devices was investigated to boost the efficiency and reliability of optimization, which resulted in up to 87.6% and up to 47% reduction of required training data compared with the fixed iteration method and the tiny constant method, respectively.
References
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Journal ArticleDOI

Multilayer feedforward networks are universal approximators

TL;DR: It is rigorously established that standard multilayer feedforward networks with as few as one hidden layer using arbitrary squashing functions are capable of approximating any Borel measurable function from one finite dimensional space to another to any desired degree of accuracy, provided sufficiently many hidden units are available.
Book ChapterDOI

Neural Networks for Pattern Recognition

TL;DR: The chapter discusses two important directions of research to improve learning algorithms: the dynamic node generation, which is used by the cascade correlation algorithm; and designing learning algorithms where the choice of parameters is not an issue.
Proceedings ArticleDOI

Full-chip analysis of leakage power under process variations, including spatial correlations

TL;DR: The proposed method for analyzing the leakage current, and hence the leakage power, of a circuit under process parameter variations that can include spatial correlations due to intra-chip variation is presented.
Journal ArticleDOI

Statistical Compact Model Parameter Extraction by Direct Fitting to Variations

TL;DR: In this article, a statistical compact model parameter extraction method is proposed and described in detail, where the target of fitting is not the individual transistor, but statistically analyzed results (more specifically, principal components) of measured data.
Journal ArticleDOI

Analytical yield prediction considering leakage/performance correlation

TL;DR: A new chip-level statistical method to estimate the total leakage current in the presence of within-die and die-to-die variability is presented and an integrated approach to accurately estimate the yield loss when both frequency and power limits are imposed on a design is presented.