Journal ArticleDOI
Statistical Compact Model Extraction: A Neural Network Approach
TLDR
ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters.Abstract:
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.read more
Citations
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Journal ArticleDOI
Prediction of Process Variation Effect for Ultrascaled GAA Vertical FET Devices Using a Machine Learning Approach
TL;DR: An accurate and efficient machine learning (ML) approach which predicts variations in key electrical parameters using process variations (PVs) from ultrascaled gate-all-around (GAA) vertical FET (VFET) devices with the same degree of accuracy, as well as improved efficiency compared to a 3-D stochastic TCAD simulation.
Journal ArticleDOI
Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics
TL;DR: This letter shows an important role in filling the gap between the emerging device proposal and the development of the SPICE model and the results are compared with a general linear model (GLM).
Proceedings ArticleDOI
Analysis on Process Variation Effect of 3D NAND Flash Memory Cell through Machine Learning Model
TL;DR: This work investigated process variation effect of 3D NAND flash memory cell, especially about geometric variation using a machine learning (ML) model, which has multi-input and multi-output (MIMO) structure and deep hidden layers to train and predict complex data of process variation.
Journal ArticleDOI
Machine learning method to predict threshold voltage distribution by read disturbance in 3D NAND Flash Memories
Journal ArticleDOI
Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition
Bokyeom Kim,Mincheol Shin +1 more
TL;DR: In this paper, the effective stopping condition (ESC) for Bayesian optimization of MOSFET devices was investigated to boost the efficiency and reliability of optimization, which resulted in up to 87.6% and up to 47% reduction of required training data compared with the fixed iteration method and the tiny constant method, respectively.
References
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Neural Networks for Pattern Recognition
Suresh Kothari,Heekuck Oh +1 more
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Proceedings ArticleDOI
Full-chip analysis of leakage power under process variations, including spatial correlations
TL;DR: The proposed method for analyzing the leakage current, and hence the leakage power, of a circuit under process parameter variations that can include spatial correlations due to intra-chip variation is presented.
Journal ArticleDOI
Statistical Compact Model Parameter Extraction by Direct Fitting to Variations
K. Takeuchi,Masami Hane +1 more
TL;DR: In this article, a statistical compact model parameter extraction method is proposed and described in detail, where the target of fitting is not the individual transistor, but statistically analyzed results (more specifically, principal components) of measured data.
Journal ArticleDOI
Analytical yield prediction considering leakage/performance correlation
TL;DR: A new chip-level statistical method to estimate the total leakage current in the presence of within-die and die-to-die variability is presented and an integrated approach to accurately estimate the yield loss when both frequency and power limits are imposed on a design is presented.
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