Journal ArticleDOI
Statistical modeling of device mismatch for analog MOS integrated circuits
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TLDR
A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described, and Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area.Abstract:
A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms. >read more
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BSIM: Berkeley short-channel IGFET model for MOS transistors
TL;DR: The Berkeley short-channel IGFET model (BSIM) as discussed by the authors is an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design is described.