Journal ArticleDOI
Statistical modeling of device mismatch for analog MOS integrated circuits
Reads0
Chats0
TLDR
A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described, and Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area.Abstract:
A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms. >read more
Citations
More filters
Journal ArticleDOI
Employing Scaled Sigma Sampling for Efficient Estimation of Rare Event Probabilities in the Absence of Input Domain Mapping
TL;DR: This paper presents an innovative scaled sigma sampling (SSS) technique that is able to obtain an accurate quantification of the low probability tails without requiring visibility to the failure regions or their input dimensionality.
Proceedings ArticleDOI
Mismatch distance term compensation in centroid configurations with nonzero-area devices
TL;DR: This paper presents an analytical approach to distance term compensation in mismatch models of integrated devices by examining the conditions that minimize parameter mismatch under the assumption of zero-area devices.
Proceedings ArticleDOI
Computing parametric yield adaptively using local linear models
Mien Li,Linda Milar +1 more
TL;DR: The work addresses difficulties with modeling by adaptively constructing the model piece by piece, namely, by efficiently and recursively partitioning the disturbance space into several regions, each of which is then modeled by a local linear model.
Proceedings ArticleDOI
Parameter monitoring: Advantages and pitfalls
TL;DR: It is shown that, by means of monitor measurement data regression, the prediction can be improved and an analysis of the resulting prediction error is presented, which is used to evaluate the method for specific cases.
Journal ArticleDOI
A CMOS continuous time bandpass filter with peak detection based automatic tuning
J. F. Parker,K. W. Current +1 more
TL;DR: In this paper, an analysis of each block of the tuning circuit is given and the performance is evaluated in the presence of random device mismatches, and the filter's center frequency deviates from its target value by less than 2% which agrees well with theoretical calculations.
References
More filters
Journal ArticleDOI
Matching properties of MOS transistors
TL;DR: In this paper, the matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on several basic circuits.
Journal ArticleDOI
Characterisation and modeling of mismatch in MOS transistors for precision analog design
TL;DR: In this paper, a characterization methodology is presented that accurately predicts the mismatch in drain current over a wide operating range using a minimum set of measured data and the physical causes of mismatch are discussed in detail for both p- and n-channel devices.
Book
Common Principal Components and Related Multivariate Models
TL;DR: In this paper, principal component analysis relationships between matrices common practical components proportional covariance matrices partial common components and common space analysis how different are several covariance matrix? numerical methods.
Book
Statistical Analysis: A Computer Oriented Approach
TL;DR: Explains fundamental techniques of classical univariate and multivariate statistical analysis and usage of packaged statistical programs, progressing from background material through exploratory techniques to more complicated specialized analyses.
Journal ArticleDOI
BSIM: Berkeley short-channel IGFET model for MOS transistors
TL;DR: The Berkeley short-channel IGFET model (BSIM) as discussed by the authors is an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design is described.