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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

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TLDR
In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Abstract
Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs

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Citations
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Journal ArticleDOI

Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties

TL;DR: In this article, the most recent advances in the synthesis and application of phosphors for white light-emitting diodes (pc-WLEDs) with emphasis specifically on: (a) principles to tune the excitation and emission spectra of the phosphors: prediction according to crystal field theory, and structural chemistry characteristics (e.g. covalence of chemical bonds, electronegativity, and polarization effects of element); (b) pc-W LEDs with phosphors excited by blue-LED chips: phosphor characteristics, structure, and activated ions
Journal ArticleDOI

Prospects for LED lighting

TL;DR: More than one-fifth of US electricity is used to power artificial lighting as discussed by the authors and light-emitting diodes based on group III/nitride semiconductors are bringing about a revolution in energy-efficient lighting.
Journal ArticleDOI

Temperature Quenching of Yellow Ce3+ Luminescence in YAG:Ce

TL;DR: In this paper, the luminescence quenching temperature of Yttrium aluminum garnet (YAG) doped with Ce3+ is measured and analyzed for a wide range of Ce concentrations (between 0033% and 33%).
Journal ArticleDOI

Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material

TL;DR: A prototype phosphor-converted LED (pc-LED), employing Sr[LiAl3N4]:Eu(2+) as the red-emitting component, already shows an increase of 14% in luminous efficacy compared with a commercially available high colour rendering index (CRI) LED, together with an excellent colour rendition.
Journal ArticleDOI

Auger recombination in InGaN measured by photoluminescence

TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
References
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Journal ArticleDOI

High-brightness InGaAlP green light-emitting diodes

TL;DR: In this paper, a Bragg reflector using InGaAlP was realized for the first time, achieving an external quantum efficiency of 0.7% at 573 nm green light with a luminous intensity of 2 cd.
Journal ArticleDOI

Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

TL;DR: In this article, a UV light-emitting diode (LED) epilayers were grown on low dislocation density (1×108/cm2) GaN templates with sapphire substrates and removed using laser-induced lift-off and polishing techniques.
Patent

AlGaInP LIGHT EMITTING DIODE

TL;DR: In this paper, an n-type upper cladding layer is constructed by superimposing three N-type AlGaInP layers with different electron concentrations, and the relationship between the electron concentrations of the three n-Type AlgaInP layer is n 3 >n 1 >n 2.
Journal ArticleDOI

Is the light emitting diode (LED) an ultimate lamp

TL;DR: In this article, simple diagrams are used to show the transformation of a thin "slab" of intrinsic semiconductor (direct gap, kelec=khole) from an ideal "flat-band" photopumped recombination-radiation light source into an ultimate lamp, a p-n junction light emitting diode (LED).
Journal ArticleDOI

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

TL;DR: In this paper, both fixed current density and variable current density stress conditions are used to study light output degradation of light-emitting diodes (LEDs) as functions of LED stress current and LED stress time.