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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

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TLDR
In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Abstract
Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs

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Citations
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Journal ArticleDOI

Facile preparation of patterned phosphor-in-glass with excellent luminous properties through screen-printing for high-power white light-emitting diodes

TL;DR: In this paper, a facile preparation of patterned phosphor-in-glass (PiG) was proposed to improve the luminous properties of high-power white light-emitting diodes (WLEDs).
Journal ArticleDOI

Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride

TL;DR: Room-temperature quantum emitters in gallium nitride (GaN) originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range, which is promising for scalable quantum technologies.
Journal ArticleDOI

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

TL;DR: The experimental data suggest that the hybrid MQW structure can effectively push the efficient InGaN LED emission toward longer wavelengths, connecting to the lower limit of the AlGaInP LEDs’ spectral range, thus enabling completion of the LED product line covering the entire visible spectrum with sufficient luminous efficacy.
Journal ArticleDOI

Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

TL;DR: This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs.
Journal ArticleDOI

Luminescence properties of Dy3+-doped Li2SrSiO4 for NUV-excited white LEDs

TL;DR: A series of single-phase full color phosphors, Dy 3+ -doped Li 2 SrSiO 4 :Dy 3+ was synthesized by a solid-state reaction method as discussed by the authors.
References
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Journal ArticleDOI

Band parameters for III–V compound semiconductors and their alloys

TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Book

The Blue Laser Diode: GaN based Light Emitters and Lasers

TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI

Spontaneous polarization and piezoelectric constants of III-V nitrides

TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.