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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

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TLDR
In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Abstract
Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs

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Citations
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Journal ArticleDOI

Phosphor-in-glass (PIG) converter sintered by a fast Joule heating process for high-power laser-driven white lighting

TL;DR: In this article, a simple, fast, and high temperature Joule heating process was used to make phosphor-in-glass bulk sintered in less than 20 s, which greatly improved the production efficiency.
Journal ArticleDOI

Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure.

TL;DR: The proposed freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures demonstrates the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).
Journal ArticleDOI

Cymbal-shaped phosphor structure for phosphor-converted white LEDs.

TL;DR: The cymbal-shaped phosphor structure, which features a bump upon the central surface of the bottom layer, is formed by employing an injection process after the dispensing coating to improve the uniformity of the angle-dependent correlated color temperature (CCT) and also increase the luminous intensity.
Journal ArticleDOI

Structure and Photoluminescence of A Blue‐Green‐Emitting Phosphor for Near‐UV White LEDs

TL;DR: In this article, a series of phosphors Ca12(0.97−x)Al14O32F2: 0.03Ce3+, xTb3+ have been prepared by a hightemperature solid-state reaction using boric acid as flux.
References
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Journal ArticleDOI

Band parameters for III–V compound semiconductors and their alloys

TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Book

The Blue Laser Diode: GaN based Light Emitters and Lasers

TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI

Spontaneous polarization and piezoelectric constants of III-V nitrides

TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.