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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

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TLDR
In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Abstract
Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs

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Citations
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Journal ArticleDOI

Photonic Crystal Phosphors Integrated on a Blue LED Chip for Efficient White Light Generation.

TL;DR: Following the proof-of-concept experiment in the unit structure level, photonic crystal (PhC) phosphors-structurally engineered phosphor materials based on the nanophotonics principles-are integrated with a blue light-emitting diode (LED) chip to demonstrate a compact and efficient white light source.
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Subwavelength optical resonant cavity-induced enhancement of the near-band-edge emission from ZnO-core/SnO2-shell nanorods

TL;DR: In this paper, a two-step process: thermal evaporation of ZnO powders and atomic layer deposition of SnO2 was used to construct a nanorod.
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Computational study of an InGaN/GaN nanocolumn light-emitting diode

TL;DR: In this paper, a comprehensive three-dimensional analysis of the operation of a light-emitting diode is presented, where a coupled and self-consistent simulation of carrier transport and luminescence is presented to account for screening and lateral transport effects.
Journal ArticleDOI

Thermal management of high-power LED based on thermoelectric cooler and nanofluid-cooled microchannel heat sink

TL;DR: In this paper, a thermal management for light-emitting diodes (LEDs) is investigated experimentally for thermal management of high-power LEDs using nanofluids and water as coolant.
Journal ArticleDOI

Optical Hall effect—model description: tutorial

TL;DR: The optical Hall effect dielectric function tensor is defined, a brief description of the generalized ellipsometry concept, the Mueller matrix calculus, and a 4×4 matrix algebra to calculate data accessible by experiment are provided to discuss strategies and approaches for experimental data acquisition and analysis.
References
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Journal ArticleDOI

Band parameters for III–V compound semiconductors and their alloys

TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Book

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Journal ArticleDOI

Spontaneous polarization and piezoelectric constants of III-V nitrides

TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.