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Journal ArticleDOI

Subvolt electro-optical modulator on thin-film lithium niobate and silicon nitride hybrid platform.

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TLDR
A hybrid silicon nitride and lithium niobate electro-optic Mach-Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light is reported that is critical for applications ranging from optical communications to an analog photonic link.
Abstract
A low voltage operation electro-optic modulator is critical for applications ranging from optical communications to an analog photonic link. This paper reports a hybrid silicon nitride and lithium niobate electro-optic Mach–Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light. The presented amplitude modulator with an interaction region length of 2.4 cm demonstrates a DC half-wave voltage of only 0.875 V, which corresponds to a modulation efficiency per unit length of 2.11 V cm. The power extinction ratio of the fabricated device is approximately 30 dB, and the on-chip optical loss is about 5.4 dB.

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Citations
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Journal ArticleDOI

Integrated photonics on thin-film lithium niobate

TL;DR: In this article, the authors present a review of the state-of-the-art integrated thin-film LNOI photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optic.
Journal ArticleDOI

Integrated photonics on thin-film lithium niobate

TL;DR: From basic principles to the state of the art—the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto- optics are covered.
Journal ArticleDOI

Advances in on-chip photonic devices based on lithium niobate on insulator

TL;DR: In this paper, the authors present various on-chip LNOI devices categorized into nonlinear photonic and electro-optic tunable devices and photonic-integrated circuits.
Journal ArticleDOI

Integrated lithium niobate electro-optic modulators: when performance meets scalability

TL;DR: The thin-film LN platform inherits nearly all the material advantages from the legacy bulk LN devices and amplifies them with a smaller footprint, wider bandwidths, and lower power consumption.
Journal ArticleDOI

Ion-cut lithium niobate on insulator technology: Recent advances and perspectives

TL;DR: A timely review of the key advances in LNOI technology and a reasonable perspective on the near-future directions for both integrated photonics and applied physics communities are provided.
References
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Journal ArticleDOI

Silicon optical modulators

TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

TL;DR: Monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels are demonstrated.
Journal ArticleDOI

A review of lithium niobate modulators for fiber-optic communications systems

TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI

Low (Sub-1-Volt) Halfwave Voltage Polymeric Electro-optic Modulators Achieved by Controlling Chromophore Shape

TL;DR: This study, together with recent demonstrations of exceptional bandwidths and ease of integration, demonstrates the potential of polymeric materials for next generation telecommunications, information processing, and radio frequency distribution.
Journal ArticleDOI

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s −1 and beyond

TL;DR: In this paper, the authors demonstrate a Mach-Zehnder modulator with high linearity, high bandwidth, and low manufacturing cost on a silicon and lithium niobate hybrid integration platform.
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