Journal ArticleDOI
Tailoring p- and n- type semiconductor through site selective oxygen doping in Cu3N: density functional studies
Guruprasad Sahoo,Ravi Kashikar,Mahaveer K. Jain,Birabar Nanda +3 more
- Vol. 3, Iss: 6, pp 065902
TLDR
In this paper, the stability and electronic structure of pure and oxygen doped semiconducting Cu3N were investigated using ab initio density functional calculations, and it was shown that a rare intra-atomic d-p optical absorption can be realized in the pristine Cu3Ns as the Fermi level lies in the gap between the Cu-d dominated anti-bonding valence state and Cu-p conducting state.Abstract:
Using ab initio density functional calculations, we have investigated the stability and electronic structure of pure and oxygen doped semiconducting Cu3N. The oxygen can be accommodated in the system without structural instability as the formation energy either decreases when oxygen substitutes nitrogen, or remains nearly same when oxygen occupies the interstitial position. The interstitial oxygen (OI) prefers to stabilize in the unusual charge neutral state and acts as an acceptor to make the system a p-type degenerate semiconductor. In this case the hole pockets are formed by the partially occupied OI-p states. On the other hand, oxygen substituting nitrogen (OS) stabilizes in its usual −2 charge state and acts as a donor to make the system an n-type degenerate semiconductor. The electron pockets are formed by the conducting Cu-p states. In the case of mixed doping, holes are gradually compensated by the donor electrons and an intrinsic gap is obtained for stoichiometry. Our calculations predict the nature of doping as well as optical band gap variation in experimentally synthesized copper oxynitride. While interstitial doping contracts the lattice and increases the substitutional doping increases both lattice size and Mixed doping reduces Additionally we show that a rare intra-atomic d–p optical absorption can be realized in the pristine Cu3N as the Fermi level lies in the gap between the Cu-d dominated anti-bonding valence state and Cu-p conducting state.read more
Citations
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Journal ArticleDOI
Band gap evolution of bulk Cu3N and monolayer Cu2N under nonhydrostatic strain
TL;DR: In this paper, the electronic properties of bulk Cu3N and monolayer Cu2N under abplane strain have been evaluated from first principles and the electronic structure of a layered AgCu2N system was studied.
Journal ArticleDOI
Impact of Oxygen on the Properties of Cu3N and Cu3–xN1–xOx
Matthew Zervos,Andreas Othonos,Theodore Pavloudis,Stefanos Giaremis,Joseph Kioseoglou,Kalliopi Mavridou,Maria Katsikini,Fani Pinakidou,E. C. Paloura +8 more
TL;DR: In this article, the authors used reactive sputtering using Ar: 10% N2 and 100% N 2, after which they were annealed under NH3/H2 between 300 and 500 °C.
Journal ArticleDOI
Ultrafast dynamics and short-lived carriers in Cu nitride and oxynitride layers
TL;DR: In this paper, femtosecond pump-probe spectroscopy was used to investigate the ultrafast carrier dynamics in copper oxynitride (Cu3N) and showed that the recombination times extracted from the data were of the order of few picoseconds which raises the question of how suitable this material is for energy conversion applications.
Journal ArticleDOI
Manipulating elastic and mechanical properties of Cu3N through site selective Ag doping: First principles investigation
TL;DR: In this article, structural, elastic and mechanical properties of pure and Ag doped Cu3N systems are investigated using density functional calculations, where the doped atom is incorporated into the host lattice by filling the vacant interstitial site (interstitial doping) or substituting Cu (substitutional doping), from the calculated elastic constants, the pure and both kinds of doped systems are qualified as mechanically stable compounds.
References
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Generalized Gradient Approximation Made Simple
TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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TL;DR: QUANTUM ESPRESSO as discussed by the authors is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave).
Journal ArticleDOI
Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
Paolo Giannozzi,Stefano Baroni,Nicola Bonini,Matteo Calandra,Roberto Car,Carlo Cavazzoni,Davide Ceresoli,Guido L. Chiarotti,Matteo Cococcioni,Ismaila Dabo,A. Dal Corso,Stefano Fabris,Guido Fratesi,S. de Gironcoli,Ralph Gebauer,U. Gerstmann,Christos Gougoussis,Anton Kokalj,Michele Lazzeri,Layla Martin-Samos,Nicola Marzari,Francesco Mauri,Riccardo Mazzarello,Stefano Paolini,Alfredo Pasquarello,Lorenzo Paulatto,Carlo Sbraccia,Sandro Scandolo,Gabriele Sclauzero,Ari P. Seitsonen,Alexander Smogunov,Paolo Umari,Renata M. Wentzcovitch +32 more
TL;DR: Quantum ESPRESSO as discussed by the authors is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave).
Journal ArticleDOI
Metal-insulator transitions
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Journal ArticleDOI
Simplified LCAO Method for the Periodic Potential Problem
John C. Slater,G. F. Koster +1 more
TL;DR: In this paper, the LCAO interpolation method was used as an interpolation technique in connection with more accurate calculations made by the cellular or orthogonalized plane-wave methods.