Proceedings ArticleDOI
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range
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This paper has assessed the RF measurements of SiGe HBTs upto 500 GHz using TCAD simulation for the first time and bias and frequency dependent S- parameter measurements are compared with theTCAD simulation and resulting issues are discussed.Abstract:
In this paper, we have assessed the RF measurements of SiGe HBTs upto 500 GHz using TCAD simulation for the first time. In order to bring confidence in simulation, the device geometries and doping profiles are captured in the simulation deck. Then all the basic DC and RF properties are calibrated with the measured data for two different geometries. Additionally the simulated unilateral gain and small signal current gain are also brought in agreement with the corresponding measured data at different bias voltages for both the devices. Finally bias and frequency dependent S- parameter measurements are compared with the TCAD simulation and resulting issues are discussed.read more
Citations
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Journal ArticleDOI
Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation
Sebastien Fregonese,Marco Cabbia,Chandan Yadav,Marina Deng,Soumya Ranjan Panda,Magali De Matos,Didier Celi,Anjan Chakravorty,Thomas Zimmer +8 more
TL;DR: This work proposes a new procedure to emulate the measurement of active devices using an electromagnetic SPICE cosimulation and can clearly highlight that a measurement artifact that was observed for the transistor measurement can be reproduced.
Journal ArticleDOI
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz
Soumya Ranjan Panda,Soumya Ranjan Panda,Sebastien Fregonese,Marina Deng,Anjan Chakravorty,Thomas Zimmer +5 more
TL;DR: In this article, a method for the verification of high frequency measurement (up to 500 GHz) of silicon germanium heterojunction bipolar transistor (SiGe HBT) is proposed.
Journal ArticleDOI
Sub-THz and THz SiGe HBT Electrical Compact Modeling
TL;DR: In this paper, the authors present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics.
References
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Proceedings ArticleDOI
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f T / 370 GHz f MAX HBT and high-Q millimeter-wave passives
Pascal Chevalier,G. Avenier,G. Ribes,A. Montagne,E. Canderle,Didier Celi,N. Derrier,C. Deglise,Cedric Durand,Thomas Quemerais,M. Buczko,Daniel Gloria,O. Robin,Sébastien Petitdidier,Y. Campidelli,F. Abbate,Mickael Gros-Jean,L. Berthier,Jean-Damien Chapon,Francois Leverd,C. Jenny,C. Richard,Olivier Gourhant,C. De-Buttet,Remi Beneyton,Patrick Maury,S. Joblot,Laurent Favennec,M. Guillermet,P. Brun,K. Courouble,K. Haxaire,G. Imbert,E. Gourvest,J. Cossalter,O. Saxod,Clement Tavernier,F. Foussadier,B. Ramadout,R. Bianchini,C. Julien,D. Ney,Julien Rosa,Sebastien Haendler,Y. Carminati,B. Borot +45 more
TL;DR: In this paper, the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics is presented, which features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell.
Journal ArticleDOI
Calibrations for Millimeter-Wave Silicon Transistor Characterization
Dylan F. Williams,Phillip L. Corson,Jahnavi Sharma,Harish Krishnaswamy,Wei Tai,Zacharias George,David S. Ricketts,P. Watson,E. Dacquay,Sorin P. Voinigescu +9 more
TL;DR: In this article, the authors compare on-wafer through-reflect-line (TRL) and short-open-load-thru (SOLT) and LRRM probe-tip calibrations for amplifier characterization and parasitic extraction for transistor characterization on silicon integrated circuits at millimeter-wave frequencies.
Journal ArticleDOI
Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100–300-GHz Range
Sorin P. Voinigescu,E. Dacquay,Valerio Adinolfi,I. Sarkas,Andreea Balteanu,A. Tomkins,Didier Celi,Pascal Chevalier +7 more
TL;DR: In this article, a methodology for extracting and verifying the high-frequency model parameters of the HICUM L0 and L2 models of a silicon-germanium HBT from device and circuit measurements in the 110-325 GHz range is described.
Journal ArticleDOI
On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands
Sebastien Fregonese,Magali De Matos,Marina Deng,Manuel Potereau,Cédric Ayela,Klaus Aufinger,Thomas Zimmer +6 more
TL;DR: In this paper, the authors investigated on-wafer characterization of SiGe HBTs up to 500 GHz and proposed a test structure for onwafer thru-reflect-line (TRL) calibration.
Journal ArticleDOI
Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz
Sebastien Fregonese,Marina Deng,Magali De Matos,Chandan Yadav,Simon Joly,Bernard Plano,Christian Raya,Bertrand Ardouin,Thomas Zimmer +8 more
TL;DR: In this article, an exhaustive study of on-wafer and alumina offwafer calibration using measurement and electromagnetic (EM) simulation up to 500 GHz is performed, where the EM simulation is performed at two different levels, first at the intrinsic level of the devices under test for reference, and afterward up to the probe level to simulate different standards used in the off-Wafer calibration or in the onwafer calibrations in the presence of the probe.