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The operation of the semiconductor‐insulator‐semiconductor (SIS) solar cell: Theory
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In this article, the authors have developed a theory in terms of minority-carrier tunnel current transport through the interfacial layer where one semiconductor is in a nonequilibrium mode.Abstract:
Recently 12% efficient indium tin oxide (ITO) on silicon solar cells have been reported. Experiments indicate the presence of a thin interfacial insulating layer. Thus, these devices appear to belong to a class of semiconductor‐insulator‐semiconductor (SIS) solar cells where one of the semiconductors is a degenerate wide‐band‐gap oxide. We have developed a theory in terms of minority‐carrier tunnel current transport through the interfacial layer where one semiconductor is in a nonequilibrium mode. The wide‐band‐gap semiconductor serves to block band‐to‐band majority‐carrier current and thus, in principle, give better device performance than with an MIS solar cell. The effects of interfacial layer thickness, substrate doping level, surface states and interface charge, temperature on the performance of SIS solar cells have been calculated. These indicate that real‐world ITO on silicon cells should be able to achieve 20% efficiency under AMl illumination. Other combinations of semiconductors would yield even...read more
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Transparent conductors—A status review
TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
Journal ArticleDOI
New Benchmark for Water Photooxidation by Nanostructured α-Fe2O3 Films
TL;DR: In this article, thin films of silicon-doped Fe2O3 were deposited by APCVD (atmospheric pressure chemical vapor deposition) from Fe(CO)5 and TEOS (tetraethoxysilane) on SnO2-coated glass at 415 °C.
Journal ArticleDOI
Black silicon: fabrication methods, properties and solar energy applications
Xiaogang Liu,Xiaogang Liu,Paul R. Coxon,Marius Peters,Bram Hoex,Jacqueline M. Cole,Jacqueline M. Cole,Derek J. Fray +7 more
TL;DR: In this article, the use of black silicon (BSi) as an anti-reflection coating in solar cells is examined and appraised, based upon strategies towards higher efficiency renewable solar energy modules.
Journal ArticleDOI
Theory of the electrical and photovoltaic properties of polycrystalline silicon
TL;DR: In this article, a transformation of grain boundary recombination centers to a uniform distribution of such states throughout the grain was proposed, and the effective carrier lifetime was expressed in terms of grain size, allowing calculation of shortcircuit current, open-circuit voltage, and fill factor.
References
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Journal ArticleDOI
Temperature dependence of the energy gap in semiconductors
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Electrical Properties of N -Type Germanium
P. P. Debye,Esther M. Conwell +1 more
TL;DR: In this paper, an analytical formula for obtaining the mobility from lattice and impurity mobilities is included, and the effect of electron-electron collisions on the mobility is considered in a qualitative manner.
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