Journal ArticleDOI
The role of Ge-related oxygen-deficiency centers in controlling the blue-violet photo- and electroluminescence in Ge-rich SiO2 via Er doping
Aloke Kanjilal,Satoru Tsushima,C. Götz,Lars Rebohle,M. Voelskow,Wolfgang Skorupa,Manfred Helm +6 more
TLDR
In this article, the energy transfer process from the Er3+ to the Ge-related oxygen-deficiency centers (GeODCs) plays the key role in enhancing the 404 nm electroluminescence (EL) intensity in Ge-rich SiO2.Citations
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Journal ArticleDOI
Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires
TL;DR: The time resolved characteristics of the Er induced emission peak have been studied as a function of the pump flux as well as the diameter of the Ge nanowires.
Journal ArticleDOI
Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions
Santanu Manna,Rakesh Aluguri,Rajshekhar Bar,Samaresh Das,Samaresh Das,N. Prtljaga,Lorenzo Pavesi,Samit K. Ray +7 more
TL;DR: It is demonstrated that Ge nanocrystals act as strong sensitizers for Er(3+) ions emission and the effective Er excitation cross section increases by almost four orders of magnitude with respect to the one without Ge nanocystals.
Journal ArticleDOI
Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO 2 layers
TL;DR: In this paper, the origin of the near-infrared defect-related bands is discussed in the light of recombination of localized excitons in luminescence centers at the Ge/SiO interface.
Journal ArticleDOI
Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
TL;DR: In this paper, the appearance of the 1.53μm Er photoluminescence from Er-doped Ge-rich SiO2 layers is investigated in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+.
Journal ArticleDOI
Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps
TL;DR: In this paper, the authors investigated the systematic evolution of the 400 nm electroluminescence (EL) with increasing flash lamp annealing (FLA) temperature from 800 to 1100°C in an Er-doped Ge-rich metaloxide semiconductor structure.
References
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Journal ArticleDOI
Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices
Fabio Iacona,Domenico Pacifici,Alessia Irrera,Maria Miritello,Giorgia Franzò,Francesco Priolo,Delfo Sanfilippo,G. Di Stefano,P.G. Fallica +8 more
TL;DR: In this article, the electroluminescence properties of Er-doped Si nanoclusters (NC) embedded in metal-oxide-semiconductor devices are investigated, and an efficient carrier injection occurs and Er is excited, producing an intense 1.54 μm room temperature EL.
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Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
TL;DR: In this paper, the microstructural, optical and electrical properties of Si-, Ge- and Sn-implanted silicon dioxide layers were investigated, and it was found that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV(Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV.
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Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters
B. Garrido,C. García,S.-Y. Seo,Paolo Pellegrino,Daniel Navarro-Urrios,Nicola Daldosso,Lorenzo Pavesi,Fabrice Gourbilleau,Richard Rizk +8 more
TL;DR: In this article, the interaction between Si nanoclusters Si-nc and Er in SiO2 was investigated, and the optical characterization and modeling of this system, and its effectiveness as a gain material for optical waveguide amplifiers at 1.54 m.
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Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals.
TL;DR: It is argued that the fast excitation and quenching are facilitated by Auger processes related to transitions of confined electrons or holes between the space-quantized levels of Si nanocrystals dispersed in SiO2.