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Journal ArticleDOI

Theory of polarization of crystalline solids

R. D. King-Smith, +1 more
- 15 Jan 1993 - 
- Vol. 47, Iss: 3, pp 1651-1654
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TLDR
It is shown that physically $\ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions.
Abstract
We consider the change in polarization \ensuremath{\Delta}P which occurs upon making an adiabatic change in the Kohn-Sham Hamiltonian of the solid. A simple expression for \ensuremath{\Delta}P is derived in terms of the valence-band wave functions of the initial and final Hamiltonians. We show that physically \ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions. The formulation is successfully applied to compute the piezoelectric tensor of GaAs in a first-principles pseudopotential calculation.

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Quantum-mechanical condensed matter simulations with CRYSTAL

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Beyond Dirac and Weyl fermions: Unconventional quasiparticles in conventional crystals

TL;DR: The guiding principle of the classification is to find irreducible representations of the little group of lattice symmetries at high-symmetry points in the Brillouin zone for each of the 230 space groups (SGs), the dimension of which corresponds to the number of bands that meet at the high-Symmetry point.
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The origin of ferroelectricity in magnetoelectric YMnO3.

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WIEN2k: An APW+lo program for calculating the properties of solids

TL;DR: The WIEN2k program is based on the augmented plane wave plus local orbitals (APW+lo) method to solve the Kohn-Sham equations of density functional theory, and the various options, properties, and available approximations for the exchange-correlation functional are mentioned.
Journal ArticleDOI

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter
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