Journal ArticleDOI
Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact
TLDR
In this article, a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer was developed.Abstract:
We have developed a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer. Effects of thermal annealing in an argon ambient on the electrical and photoresponse properties were investigated. Annealing at temperatures up to 550°C improves the rectifying current-voltage characteristics, resulting in a dramatic enhancement of DUV responsivity at 220nm by a factor of 4×103. A blind ratio as large as 105 between DUV and visible light has been achieved at a reverse bias as small as 1V. Development of the thermally stable WC-based Schottky and ohmic contacts provides a route for stable operation of a diamond photodetector at high temperatures.read more
Citations
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Journal ArticleDOI
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
Journal ArticleDOI
Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors
Xiaosheng Fang,Yoshio Bando,Meiyong Liao,Ujjal K. Gautam,Chunyi Zhi,Benjamin Dierre,Baodan Liu,Tianyou Zhai,Takashi Sekiguchi,Yasuo Koide,Dmitri Golberg +10 more
TL;DR: Fang et al. as mentioned in this paper proposed a method to solve the problem of nano-architectural nanoarchitectures by using a sensor-based approach based on NIMS Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan).
Journal ArticleDOI
Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
Journal ArticleDOI
ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters, Lasers, and Sensors
Xiaosheng Fang,Yoshio Bando,Ujjal K. Gautam,Tianyou Zhai,Haibo Zeng,Xijin Xu,Meiyong Liao,Dmitri Golberg +7 more
TL;DR: A comprehensive review of the state-of-the-art research activities in ZnO and ZnS nanostructures, including their syntheses and po... as discussed by the authors.
Journal ArticleDOI
Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
Chao Xie,Xing-Tong Lu,Xiao-Wei Tong,Zhi-Xiang Zhang,Feng-Xia Liang,Lin Liang,Lin-Bao Luo,Yucheng Wu +7 more
TL;DR: In this article, a comprehensive review of the applications of inorganic ultrawide-bandgap (UWBG) semiconductors for solar-blind DUV light detection in the past several decades is presented.
References
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Journal ArticleDOI
Gain mechanism in GaN Schottky ultraviolet detectors
TL;DR: In this article, a unified description of the gain mechanism in GaN Schottky detectors is presented, which is valid for all device structures under study, and represents a unified model for all devices under study.
Journal ArticleDOI
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
TL;DR: In this paper, the authors report on the material, electrical, and optical properties of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness.
Journal ArticleDOI
Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors
TL;DR: In this article, GaN-based Schottky detectors were implemented and their photoresponse as a function of the incident power and time was measured, showing gain saturation and persistent photoconductivity behavior.