Journal ArticleDOI
Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity.
Xing Zhou,Xiaozong Hu,Shasha Zhou,Hong-Yue Song,Qi Zhang,Lejing Pi,Liang Li,Huiqiao Li,Jing-Tao Lü,Tianyou Zhai +9 more
TLDR
The distinctive WSe2 /SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph /Idark ratio of ≈106 ) and photoresponsivity of 244 A W-1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm-2 ).Abstract:
van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe2 /SnS2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe2 /SnS2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe2 /SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph /Idark ratio of ≈106 ) and photoresponsivity of 244 A W-1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm-2 ).read more
Citations
More filters
Journal ArticleDOI
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
TL;DR: A review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented in this paper, where a brief insight into the detection mechanisms of 2D material photodeterceptors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photoderectors is provided.
Journal ArticleDOI
Doping engineering and functionalization of two-dimensional metal chalcogenides
TL;DR: This review highlights the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism.
Journal ArticleDOI
2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection
Feng Wang,Zhenxing Wang,Lei Yin,Lei Yin,Ruiqing Cheng,Ruiqing Cheng,Junjun Wang,Junjun Wang,Yao Wen,Yao Wen,Tofik Ahmed Shifa,Tofik Ahmed Shifa,Fengmei Wang,Yu Zhang,Xueying Zhan,Jun He,Jun He +16 more
TL;DR: A comprehensive review on the state-of-the-art photodetections of two-dimensional materials beyond graphene and TMDs is given and the current research status of this area is concluded.
Journal ArticleDOI
Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves
Qinxi Qiu,Zhiming Huang +1 more
TL;DR: In this paper, the authors reviewed the recent progress on 2D material photodetectors, covering the spectrum from ultraviolet to terahertz waves, and proposed defect engineering, p-n junctions and hybrid detectors.
References
More filters
Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Atomically thin p–n junctions with van der Waals heterointerfaces
Chul Ho Lee,Chul Ho Lee,Gwan Hyoung Lee,Arend M. van der Zande,Wenchao Chen,Yilei Li,Minyong Han,Xu Cui,Ghidewon Arefe,Colin Nuckolls,Tony F. Heinz,Jing Guo,James Hone,Philip Kim +13 more
TL;DR: The tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes in atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides.
Journal ArticleDOI
Van der Waals heterostructures and devices
TL;DR: In this paper, the authors review the recent progress and challenges of 2D van der Waals interactions and offer a perspective on the exploration of 2DLM-based vdWHs for future application in electronics and optoelectronics.
Journal ArticleDOI
Light-emitting diodes by band-structure engineering in van der Waals heterostructures
Freddie Withers,O. Del Pozo-Zamudio,Artem Mishchenko,A. P. Rooney,Ali Gholinia,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Alexander I. Tartakovskii,Kostya S. Novoselov +10 more
TL;DR: In this paper, the authors describe light-emitting diodes (LEDs) made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences.
Journal ArticleDOI
Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
F. Withers,O. Del Pozo-Zamudio,Artem Mishchenko,A. P. Rooney,Ali Gholinia,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,A. K. Geim,Alexander I. Tartakovskii,K. S. Novoselov +10 more
TL;DR: It is shown that light-emitting diodes made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences can also provide the basis for flexible and semi-transparent electronics.