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Ultrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin current pulse

TLDR
In this article, an out-of-plane polarizer (OPP) was used to quickly excite spin torque (ST) switching and an IPP/analyzer (IPP) was added to accelerate spin torque switching.
Abstract
We report on spin valve devices that incorporate both an out-of-plane polarizer (OPP) to quickly excite spin torque (ST) switching and an in-plane polarizer/analyzer (IPP) For pulses <200 ps, we observe reliable precessional switching due largely to ST from the OPP Compared to a conventional spin valve, for a given current amplitude from ∼2 to 3 times the zero-thermal-fluctuation critical current (Ic0), the addition of the OPP can decrease the pulse width necessary for switching by a factor of 10 or more The effect of the IPP also has beneficial ST consequences for the short pulse switching behavior

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Citations
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Journal ArticleDOI

Proposal for an all-spin logic device with built-in memory

TL;DR: This work proposes a spintronic device that uses spin at every stage of its operation and shows the five essential characteristics for logic applications: concatenability, nonlinearity, feedback elimination, gain and a complete set of Boolean operations.
Journal ArticleDOI

Interface-induced phenomena in magnetism

TL;DR: This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces, identifying the most exciting new scientific results and pointing to promising future research directions.
Journal ArticleDOI

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

TL;DR: In this paper, a review of magnetic magnetic anisotropy at magnetic metal/oxide interfaces is presented, along with some applications of this interfacial PMA in STT-MRAM.
Journal ArticleDOI

Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

TL;DR: In this article, a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction were used for OST-MRAM devices that incorporate an in-plane magnetized free layer and synthetic antiferromagnetic reference layer.
References
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Journal ArticleDOI

Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars

TL;DR: Using thin film pillars approximately 100 nm in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, this work examines the process by which the scattering from the ferromagnetic layers of spin-polarized currents flowing perpendicular to the layers causes controlled reversal of the moment direction in the thin Co layer.
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Spin-torque oscillator using a perpendicular polarizer and a planar free layer

TL;DR: This work presents the realization of an STO that contains a perpendicular spin current polarizer combined with an in-plane magnetized free layer, characterized by high-frequency oscillations of the free-layer magnetization, consistent with out-of-plane steady-state precessions induced at the threshold current by a spin-transfer torque from perpendicularly polarized electrons.
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Time-Domain Measurements of Nanomagnet Dynamics Driven by Spin-Transfer Torques

TL;DR: Time-resolved studies of magnetic relaxation allow for the direct measurement of magnetic damping in a nanomagnet and prove that this damping can be controlled electrically using spin-polarized currents.
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Time-resolved reversal of spin-transfer switching in a nanomagnet.

TL;DR: Time-resolved measurements of spin-transfer-induced (STI) magnetization reversal were made in current-perpendicular spin-valve nanomagnetic junctions subject to a pulsed current bias and demonstrate that spin- transfer induced excitation is responsible for the observed magnetic reversal in these samples.
Journal ArticleDOI

Device implications of spin-transfer torques

TL;DR: In this paper, the authors examine spin-transfer torques from the perspective of three technological applications: hard disk drives, magnetic random access memory (MRAM), and current-tunable high-frequency oscillators.
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