Journal ArticleDOI
Valley and band structure engineering of folded MoS2 bilayers
Tao Jiang,Hengrui Liu,Di Huang,Shuai Zhang,Yingguo Li,Xingao Gong,Y. R. Shen,Wei-Tao Liu,Shiwei Wu +8 more
TLDR
By folding exfoliated MoS2 monolayers-MoS2 bilayers with different stacking orders, this work provides an effective and versatile means to engineer transition-metal dichalcogenide materials with desirable electronic and optical properties.Abstract:
Folding MoS2 monolayers to obtain bilayers with different stacking orders results in enhanced valley- and spin-polarizations compared with natural Bernal-stacked bilayers.read more
Citations
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Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Xu Cui,Gwan Hyoung Lee,Young Duck Kim,Ghidewon Arefe,Pinshane Y. Huang,Chul Ho Lee,Daniel Chenet,Xiangwei Zhang,Lei Wang,Fan Ye,Filippo Pizzocchero,Bjarke Sørensen Jessen,Kenji Watanabe,Takashi Taniguchi,David A. Muller,Tony Low,Philip Kim,James Hone +17 more
TL;DR: Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.
Journal ArticleDOI
Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
TL;DR: In this article, the basic lattice vibrations of 2D transition metal dichalcogenide (TMD) nanosheets are discussed, including highfrequency optical phonons, interlayer shear and layer breathing phonons.
Journal ArticleDOI
Phase engineering of transition metal dichalcogenides
TL;DR: The ability to tune the chemistry by choosing a unique combination of transition metals and chalcogen atoms along with controlling their properties by phase engineering allows new functionalities to be realized with TMDs.
Journal ArticleDOI
Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides.
TL;DR: The bulk electronic structures of these new 2D TMD materials as well as the theoretical models developed at different levels are reviewed, along which the understanding of the origins of a variety of properties observed or predicted is sort out.
References
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Journal ArticleDOI
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
Journal ArticleDOI
Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.
TL;DR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.