Journal ArticleDOI
XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts
Toshiyuki Sameshima,Setsuo Usui +1 more
TLDR
Mo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C in this article, where a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate.Abstract:
Mo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.read more
Citations
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Patent
Semiconductor device and method for forming the same
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Journal ArticleDOI
Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
TL;DR: In this paper, the phase transformation mechanisms and the resulting microstructures of excimer laser-induced crystallization of amorphous Si films on SiO2 were investigated, and it was shown that the process can be characterized into two major regimes, based on the dependence of the grain size and the melt duration as a function of the incident energy density.
Journal ArticleDOI
On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films
James S. Im,Hyun Jae Kim +1 more
TL;DR: In this article, a theoretical analysis of the super lateral growth (SLG) phenomenon observed in the pulsed laser-induced solidification of amorphous thin Si films on SiO2 is presented.
Journal ArticleDOI
Controlled Super‐Lateral Growth of Si Films for Microstructural Manipulation and Optimization
James S. Im,M. A. Crowder,Robert S. Sposili,J. P. Leonard,Hyun Jae Kim,Jung H. Yoon,V. V. Gupta,H. Jin Song,H. S. Cho +8 more
TL;DR: In this paper, a particular form of pulsed-laser-based thin-film crystallization method referred to as controlled super-lateral growth (C-SLG) is presented.
Journal ArticleDOI
XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's
TL;DR: In this article, a polycrystalline silicon thin-film transistors (poly-Si TFT's) with a high carrier mobility were fabricated at low processing temperatures of 150 and 250°C, and they were successfully crystallized at room temperature by multistep irradiation of XeCl-308 nm excimer laser pulses without explosive evaporation of hydrogen.
References
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Journal ArticleDOI
Structural interpretation of the vibrational spectra of a-Si: H alloys
TL;DR: In this article, the ir and Raman spectra of Si: H alloys produced by plasma decomposition of Si${\mathrm{H}}_{4}$ are studied for a wide range of deposition conditions.
Journal ArticleDOI
Electronic structure of silicon
TL;DR: Yang and Coppens's recent determination of the valence charge density in silicon makes it possible to assess the accuracy of the pseudocharge densities for the first time as discussed by the authors, and a detailed comparison is made between experimental results obtained from optical, photoemission, x-ray, and cyclotron-resonance measurements.
Journal ArticleDOI
Application of amorphous silicon field effect transistors in addressable liquid crystal display panels
TL;DR: In this paper, it is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels.
Journal ArticleDOI
Optical characterization of amorphous silicon hydride films
TL;DR: In this paper, the optical properties of thin a-SiHx films were studied and the intrinsic optical limitations on the performance of the SiHx cells were defined for the absorption range 10−1-106 cm−1.
Journal ArticleDOI
Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source
Gordon P. Pollack,William F. Richardson,Satwinder Malhi,T.D. Bonifield,Hisashi Shichijo,Sanjay K. Banerjee,M. Elahy,Ashwin H. Shah,R.H. Womack,Pallab K. Chatterjee +9 more
TL;DR: In this article, a simple method for the "last step" passivation of grain boundaries in polysilicon MOSFET's is presented, which involves diffusion of atomic hydrogen at 450°C from a plasma-deposited compressive silicon nitride layer for reaction at silicon grain-boundary dangling bond sites.