Patent
Zirconium oxide and hafnium oxide etching using halogen containing chemicals
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TLDR
In this article, a method for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon.Abstract:
A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF 4 , CHF 3 , CH 2 F 2 , CH 3 F, C 4 F 8 , C 4 F 6 , C 5 F 6 , BCl 3 , Br 2 , HF, HCl, HBr, HI, and NF 3 and leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.read more
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Patent
Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same
Yanjun Ma,Yoshi Ono +1 more
TL;DR: In this paper, a high-k dielectric film is provided, which is doped with divalent or trivalent metals to vary the electron affinity, and consequently the electron and hole barrier height.
Patent
Composite dielectric forming methods and composite dielectrics
Kie Y. Ahn,Leonard Forbes +1 more
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Patent
Selective removal of a metal oxide dielectric
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TL;DR: In this article, a method for fabricating a semiconductor device by forming a first gate insulation film of SiO2 and a second gate insulating film of high dielectric constant metal oxide on a single crystal silicon substrate was proposed.
Patent
Method of plasma etching of high-K dielectric materials
TL;DR: In this article, a method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry was proposed, which was shown to work well on a high-dielectric material.