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The enhanced response for the ultrathin transistors provides insight into the device physics.
Proceedings ArticleDOI
01 Dec 2016
11 Citations
In this paper, supported by real-life experiments, we demonstrate that several vulnerabilities of iPhone 6 with iOS 8, which are brought by ordinary user operations, can lead to the leakage of the private data.
The fabricated transistors exhibit excellent I-V characteristics.
And the new design also requires much fewer transistors than previous designs.
The device offers 6 times higher current handling capability than conventional n-channel power LDMOS transistors of comparable size and voltage capability and still maintains a comparable switching speed.
We propose new side-gate transistors.
The proposed sensor front ends require only 6 to 8 NMOS transistors, resulting in more than one order of magnitude smaller area than the previous state of the art.
The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date.
The results demonstrate a new scheme of building nanometer-scale transistors.
It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs.
The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires.
Journal ArticleDOI
Qin Zhang, Wei Zhao, Alan Seabaugh 
555 Citations
This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors.

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