Showing papers on "Insulator (electricity) published in 2000"

Development of a Low‐Dielectric‐Constant Polymer for the Fabrication of Integrated Circuit Interconnect

Abstract: For faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectric—SiLK resin, a solution of a low-molecular-weight aromatic thermosetting polymer—are reviewed and examples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, are given.

Magnetoresistive sensor having hard biased current perpendicular to the plane sensor

Abstract: The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.

Ice accretions on high–voltage conductors and insulators and related phenomena

Abstract: This paper proposes to survey a good part of the research work accomplished to date on the atmospheric icing of conductors and insulators in the presence of high voltage, with emphasis laid on the studies carried out at the University of Quebec in Chicoutimi. The review covers laboratory testing and mathematical modelling. The role of several electrical parameters, such as electric field strength and polarity, corona discharge, water droplet charge and ionic wind velocity, on the structure and amount of ice accretion on high–voltage conductors, is discussed. Concerning the icing of insulators, the initiation of electrical discharge on the ice surface, the formation of local arcs along the air gaps and their development to a flashover arc along the insulators are discussed. Basic experiments on the role of several major parameters relating to ice accretion, insulator characteristics and voltage type and polarity, on the maximum withstand voltage of short insulators, are also discussed. Finally, several measures for improving the withstand voltage of insulators are briefly recalled.

Laser chamber with fully integrated electrode feedthrough main insulator

Abstract: A feedthrough structure (280) of a gas discharge laser chamber conducts electric power through the wall of a sealed gas enclosure (212) to a single piece electrode (218) inside the enclosure. The feedthrough structure includes a single piece integrated main insulator (276) larger than the electrode. The main insulator (276) is compressed between the electrode (218) and the wall of the enclosure (212). The surfaces forming interfaces between the electrode and the single piece insulator are the insulator and the wall are all very smooth to permit the parts to expand and contract as the chamber temperature varies. The feedthrough structure also provides mechanical support and alignment for the electrode and includes seals (184) to prevent gas leakage around the feedthrough structure.

Stacked-chip semiconductor device

Abstract: A stacked-chip semiconductor device includes a rigid insulator board having therein a central opening and thereon a wiring pattern, and a base insulator bonded to the rigid insulator board and having a wiring pattern. Both the wiring patterns are connected together via through-holes formed in the rigid insulator board. A first semiconductor chip is mounted on the base insulator film within the opening of the rigid insulator board, whereas a second semiconductor chip is mounted on the rigid insulator board overlying the opening.

Boundary element studies on insulator shape and electric field around HV insulators with or without pollution

Abstract: Capacitive-resistive field computations are carried out around post-type HV insulators of varying shapes. The boundary element method (BEM) has been employed for electric field computations. Different insulator shapes have been obtained by varying several parameters, which define the shape of the HV insulator contour. For each insulator shape, the maximum stress occurring on the insulator surface has been determined with no surface pollution, uniform surface pollution and also partial surface pollution. For partial pollution, several cases have been studied, in which different sections of the insulator surface are polluted. Furthermore, the effect of electrode radius on the maximum stress on insulator surface has been investigated. The results obtained are presented in this paper in detail.

Low voltage track lighting system

Abstract: The present invention is an improved low voltage track lighting system The system includes a flat track which may be bent The track has a flat insulator base with opposed flat sides The depth of the base is greater than its thickness A thin flat electrical conductor is fixed to each of the flat sides of the base forming conductors on opposite sides of the base A step down transformer is adapted to be connected to a source of electric power A feed mount is adapted to be fixed to a supporting surface to be held by the supporting surface An electric conductive path in the feed mount is connected to each conductor and to the step down transformer, so that each of the conductors is connected to the step down transformer An adapter is supported on the track and is in electric contact with each of the conductors of the track A low voltage lamp is supported on the adapter and in electric contact with the adapter to be energized by an electric current from the step down transformer

Model of room-temperature resonant-tunneling current in metal'insulator and insulator'insulator heterostructures

Abstract: Employing a multiband scattering formalism for ballistic tunneling currents, a systematic theoretical study of the current-voltage characteristics of metal-insulator and insulator-based resonant-tunneling diodes is presented. We predict ultrathin metal(CoSi2)/insulator(CaF2) and insulator(CdF2)/insulator(CaF2) heterostructures on silicon substrates to be excellent candidates for room-temperature quantum-effect devices. The scattering formalism in the framework of tight-binding theory is cast in a particularly compact and transparent form that is applicable to long-range tight-binding interactions and complex unit cells. The results are in good agreement with experimental data. The physical origin of the distinct current resonances, particularly in the metal/insulator structures, is explained in detail and found to originate in the localized character of the transition-metal d states. Furthermore, the stability of the resonance characteristics with regard to layer thickness variations, substrate orientations, and interface roughness is predicted.

Fiber optic voltage sensor for 420 kV electric power systems

Abstract: We present an optical fiber voltage sensor for 420 kV electric power lines. The sensor exploits the converse piezoelectric effect of quartz and measures the voltage by a line integration of the electric field. The alternating voltage is partitioned to a series of four cylinder-shaped quartz crystals, which are embedded in polyurethane resin within a 3.2-m long insulator tube of fiber reenforced epoxy. The alternating piezoelectric deformations of the crystals are sensed by a common elliptical-core dual-mode fiber, which is wound onto the circumferential crystal surfaces. The fiber is interrogated using low coherence interferometry. We determine the dielectric design of the sensor from a numerical analysis of the electric field distribution within and in the vicinity of the sensor. We experimentally verify the dielectric reliability under ac overvoltages up to 520 kV root mean square (rms) and lightning and switching impulse voltages up to 1425 and 1050 kV, respectively. Further, we investigate the sensor performance including accuracy, dynamic range, bandwidth, and temperature dependence.

Multilayer high gradient insulator technology

Abstract: We are investigating a novel insulator concept that involves the use of alternating layers of conductors and insulators with periods on the order of 4/spl times/ higher breakdown electric field strength) than conventional insulators in long pulse, short pulse, and alternating polarity applications. A previously defined scaling law of d/sup 0:5/, where d is the insulator length, appears to apply to these new structures when the scaling parameter d is replaced by the layer period d/sub 1/. This observation implies that each layer within the structure behaves independently in the breakdown process. We present our ongoing studies investigating the degradation of the breakdown electric field strength resulting from surface roughness, the effect of gas pressure, and the performance of the insulator structure under bipolar stress. Further, we present our initial work on scaling and modeling studies.

Electrical Conduction in Insulator Particle—Solid‐State Ionic and Conducting Particle‐Insulator Matrix Composites A Unified Theory

Abstract: A unified model is introduced for the first time for electrical conduction in both the insulator particle‐solid‐state ionic and conducting particle‐insulator matrix composites. In the model, the basic formulation of effective medium approximation is reconsidered by replacing the site conductivities with the contact conductivities as well as the probability of site occupation with the probability of contact development. The model predictions are in agreement with the available experimental data. © 2000 The Electrochemical Society. All rights reserved.

Silicon anti-fuse structures, bulk and silicon on insulator fabrication methods and application

Abstract: A method and semiconductor structure that uses a field enhanced region where the oxide thickness is substantially reduced, thereby allowing antifuse programming at burn-in voltages which do not damage the standard CMOS logic. The semiconductor device comprises a substrate that has a raised protrusion terminating at a substantially sharp point, an insulator layer over the raised protrusion sufficiently thin to be breached by a breakdown voltage applied to the sharp point, a region comprised of a material on the insulator over the raised protrusion for becoming electrically coupled to the substrate after the insulator layer is breached by the breakdown voltage, and a contact for supplying the breakdown voltage to the substrate. In a second embodiment, the semiconductor device comprises a substrate having a trough formed in a top surface of the substrate, a relatively thick insulator layer over the top surface of the substrate, a relatively thin insulator layer over the trough that is breached by a breakdown voltage applied to the trough, a region comprised of a material on the relatively thin insulator layer over the trough for becoming electrically coupled to the substrate after the relatively thin insulator layer is breached by the breakdown voltage, and a contact for supplying the breakdown voltage to said substrate.

Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers

Abstract: A process for forming a low resistivity tungsten layer, for use as a metal gate structure, or a metal damascene structure, has been developed. The process features initial deposition of a metastable tungsten nitride layer, via a plasma enhanced, or metal organic chemical vapor deposition procedures, resulting in good adhesion, in addition to good step coverage, of the tungsten nitride layer, to underlying or adjacent insulator layers. The high resistivity, tungsten nitride layer is then converted to a lower resistivity tungsten layer, via a rapid thermal anneal procedure, performed in an argon ambient, or in vacuum.

Corona discharge characteristics of water droplets on hydrophobic polymer insulator surface

Abstract: Although polymer insulators show excellent insulation characteristics, especially under contaminated conditions due to hydrophobicity on their surface, it is reported that corona discharges generated at high electric field portions such as energized end of a 500-kV polymer insulator, damaged the surface of its sheath. Due to hydrophobicity, voltage distribution along a long rod type polymer insulator is very non-uniform even under wet conditions. So water droplets deposited on hydrophobic surface of energized end of a polymer insulator for higher voltage application are subjected to high electric field, and deformed under such electric field. Corona discharges may generate from the tips of deformed water droplets. We investigated fundamental mechanism of corona discharges from water droplets on the energized end of a hydrophobic polymer insulator under AC and DC voltages. Behavior of water droplets was carefully examined by a high speed video camera and leakage currents were measured for detailed analysis.

Electrical system with a stand-off insulator-sensor for on-line partial discharge monitoring of the state of high-voltage insulation

Abstract: For an electrical system a sensor and associated circuits are provided for on-line monitoring of the state of the high-voltage insulation in the electrical system. In this arrangement, both the power frequency signal and of the radio frequency signals associated with partial discharge activity may be monitored and transmitted from the sensor to remote monitoring instrumentation. The sensor is disposed in a stand-off insulator which also may act to support the high voltage conductor system.

Structure for connecting electrical cables to a flat electrical cable

Abstract: There is provided a structure for connecting individual electrical cables to a flat electrical cable. The electrical cables respectively include a core wire group exposed at an end portion thereof, and an elastic sealing material adjacent the end portion, whereas the flat electrical cable includes conductor elements at an end portion thereof, and an elastic sealing material adjacent the end portion. The core wire groups and the conductor elements are superposed thereby forming a joint section. The joint section and the elastic sealing materials are molded with an insulator resin, whereby the elastic sealing material is adhered to the outer surface of the electrical cables and the flat electrical cable by compression under the insulator resin.

Cathode including a mixture of a metal and an insulator for organic devices and method of making the same

Abstract: An organic device including an organic layer of organic material; and a cathode in contact with the organic layer and including a mixture of a metal and an insulator. The mixture can be an alloy or a composite of the metal and insulator, and can be for example a mixture of Al:LiF or Al:CsF. The device can be incorporated in an organic light-emitting device, an organic transistor, an organic solid state laser, or any device requiring carrier injection into an organic material.

Alkaline cell with insulator

Abstract: The performance of alkaline cells comprising a zinc anode and manganese dioxide cathode can be improved, especially in high power application, by applying thermal insulating material to the cell casing. The thermal insulation material can be conveniently applied between the cell label and casing. The thermal insulating material significantly reduces the overall heat transfer coefficient, U0, for the cell. The insulation increases the internal temperature of the cell during discharge, resulting in better performance.

Reliability of built in aluminum interconnection with low-ε dielectric based on porous anodic alumina

Abstract: In order to enhance the reliability of silicon ICs, an electrochemical anodizing technique was used to form an intralevel alumina insulator for multilevel aluminum metallization. The low dielectric constant of about 2.4 was attained by chemical etching of porous alumina films in an anodizing solution. The intralevel insulator based on porous alumina had the following parameters measured: the breakdown voltage was more than 400 V, the leakage current at 15 V applied voltage was less than 10 −9 A/cm −2 . An investigation of thermal overheating at high current density operation has shown that the developed structure offers advantages over aluminum interconnection passivated by silica insulator. The reliability of built in aluminum interconnection with low- e porous alumina satisfies all requirements of advanced IC technology.

Method for establishing ultra-thin gate insulator using anneal in ammonia

Abstract: A method for fabricating a semiconductor device including a silicon substrate includes forming a thin Oxide base film on a substrate, and then annealing the substrate in ammonia. FET gates are then conventionally formed over the gate insulator. The resultant gate insulator is electrically insulative without degrading performance with respect to a conventioanal gate oxide insulator.

Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity

Abstract: The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.

Heat dissipating substrate and manufacture thereof

Abstract: PROBLEM TO BE SOLVED: To reduce the size of a heat dissipating plate by providing a circuit pattern for forming a circuit of electric conductor on the upper surface of an insulating resin layer formed on the other major surface of a heat sink thereby utilizing the substrate surface effectively. SOLUTION: A heat sink 1 has heat dissipation fins 2 formed on one major surface and an insulating resin layer 3 formed on the other major surface 12 thereof. A circuit pattern 4, i.e., a conductor layer for forming an electric circuit, is formed on the surface of the insulating resin layer 3. The circuit pattern 4 is buried in the insulating resin layer 3 while exposing only the upper surface thereof. The circuit pattern 4 is fixed with electronic parts 8, e.g. semiconductor elements or resistors. A terminal 4A being connected with the circuit pattern 4 is connected with a connection for other electronic apparatus. The insulating resin layer 3 is preferably filled with an inorganic insulator filler having high thermal conductivity in order to enhance thermal conductivity while lowering the coefficient of linear expansion.

Stator of motor

Abstract: PROBLEM TO BE SOLVED: To enhance the insulation performance between the windings of neighboring unit stators by enveloping the winding of the unit stator with an insulator. SOLUTION: In the stator of a motor where the unit stators 10 retaining windings 2 on the unit stacked iron cores 1 forming pole teeth are made in circular form by a specified number of pieces, the winding 2 of each unit stator 10 is so covered with an insulator as to envelop it. Here, a flexible foil-form one such as insulating paper is used for the insulator 3, and also a resin insulator can also be used jointly. As a result, the stable operation of the motor, which does not cause insulation breakage between each and the next of the windings 2 of neighboring unit stators 10, becomes possible.

Breakdown mechanism of Al2O3 based metal-to-metal antifuses

Abstract: An impulse thermal breakdown model is proposed to understand the breakdown mechanism of Al 2 O 3 thin film based metal-to-metal antifuses. In this model, the electric field dependence as well as the temperature dependence of the electrical conductivity is considered. The I – V characteristic of the antifuses indicated that the conductivity of Al 2 O 3 rose greatly under high field. The threshold breakdown voltage of the antifuses was shown by experiment to be proportional to its insulator thickness and to the square root of the insulator resistivity. When breakdown of the antifuses was carried out by applying constant voltage pulse, the inverse square root of the time to breakdown was shown to be proportional to the amplitude of the pulse. All the experimental results were found to be consistent with the theoretical results of the model. In addition, an antifuse breakdown filament with a diameter of 150 nm was observed by using a scanning electron microscope.

Twisted pair cable with dual layer insulation having improved transmission characteristics

Abstract: The present invention includes a twisted pair cable having a plurality of pairs, wherein each has two conductors. Each of the conductors is covered with an inner layer insulator and an outer layer insulator, wherein the positioning of the conductors within the inner and outer insulators is eccentric with respect to the inner and outer insulators. This invention also includes a method of making a cable of the same configuration.

Organic materials. From insulator to superconductor

Abstract: A new way of converting insulators into superconductors - rather like turning water into wine - involves injecting them with lots of charge carriers. This technique has successfully created superconductors from simple organic crystals.