Showing papers on "Ion beam deposition published in 1989"

The Physics and technology of ion sources

Abstract: PrefaceList of Contributors1 Introduction (Ian Brown)2 Plasma Physics (Ian Brown)21 Introduction22 Basic Plasma Parameters221 Particle Density222 Fractional Ionization223 Particle Temperature224 Particle Energy and Velocity225 Collisions23 The Plasma Sheath231 Debye Length232 Charge Neutrality233 Plasma Oscillations24 Magnetic Field Effects241 Gyro Orbits242 Gyro Frequencies243 Magnetic Confinement244 Magnetic and Plasma Pressure25 Ionization251 Electron Impact Ionization252 Multiple Ionization253 Photoionization254 Ion Impact Ionization255 Negative Ions256 Field Ionization3 Elementary Ion Sources (Ian Brown)31 Introduction32 Terminology33 The Quintessential Ion Source34 Ion Beam Formation35 Ion Beam Parameters36 An Example37 Conclusion4 Computer Simulation of Extraction (Peter Spdtke)41 Introduction42 Positive Ion Sources421 Filament Driven Cusp Sources422 Duoplasmatrons and Duopigatrons423 Vacuum Arc Ion Sources424 Laser Ion Sources425 ECR Ion Sources426 Penning Ion Sources43 Negative Ion and Electron Sources431 Hot Cathode Electron Sources432 Plasma Electron Sources433 H- Sources44 Conclusion5 Ion Extraction (Ralph Hollinger)51 Introduction52 Fundamentals of Ion Beam Formation in the Extraction System53 Beam Quality54 Sophisticated Treatment of Ion Beam Formation in the Extraction System55 Multi-Aperture Extraction Systems56 Starting Conditions6 Beam Transport (Peter Spdtke and Ralph Hollinger)61 Introduction611 Drift612 Extraction System and Acceleration Gap613 Low Energy Beam Line62 Current Effects63 Space-Charge Compensation631 Residual Gas Collisions632 Sputtering633 Preserving Space Charge Compensation634 Influence of Space Charge Compensation64 A LEBT System for the Future Proton Linac at GSI641 Compound System642 Pentode or Two-Gap System643 Triode System and DCPost-A cceleration644 Discussion7 High Current Gaseous Ion Sources (Nikolai Gavrilov)71 Introduction72 Basic Types of High Current Ion Sources721 Filament Driven Ion Sources722 High-Frequency Ion Sources723 Cold Cathode Ion Sources73 Conclusion8 Freeman and Bernas Ion Sources (Marvin Farley, Peter Rose, and Geoffrey Ryding)81 Introduction82 The Freeman Ion Source83 The Bernas Ion Source84 Further Discussion of the Source Plasma841 Plasma and Sheath Potentials842 Effect of Sputtering on the Plasma843 Ion Heating of the Cathode and Anticathode in the Bernas Source844 Current Balance in the Freeman Source845 Current Balance in the Bernas Source85 Control Systems851 Freeman and Bernas Controls852 Bernas Indirectly Heated Cathode86 Lifetime and Maintenance Issues861 Use of BF3862 Use of PH3, AsH3, P4, and As4863 Use of Sb, Sb2O3, and SbF3864 Use of SiF4 and GeF4865 General Guidelines for the Use of Other Organic and Inorganic Compounds866 Electrode Cleaning and Maintenance867 Insulator Cleaning and Maintenance9 Radio-Frequency Driven Ion Sources (Ka-Ngo Leung)91 Introduction92 Capacitively Coupled RF Sources93 Inductively Coupled RF Sources931 Source Operation with an External RF Antenna932 Multicusp Source Operation with Internal RF Antenna933 Increasing the Ion Beam Brightness of a Multicusp RF Source with Internal Antenna934 Multicusp Source Operation with External RF Antenna94 Applications of RF Ion Sources10 Microwave Ion Sources (Noriyuki Sakudo)101 Introduction102 Microwave Plasma in Magnetic Fields1021 Plasma Parameter Changes due to Magnetic Field and Microwave Frequency1022 High Density Plasma at Off-Resonance103 Some Practical Ion Source Considerations1031 Microwave Impedance Matching to the Plasma1032 High Current Ion Beams Extracted from an Off-Resonance Microwave Ion Source104 Versatility of Beam Extraction1041 Large Cross Sectional Beam formed by a Multi-Aperture Extractor1042 Slit-Shaped Beam for Ion Implantation1043 Further Improvements in Slit-Shaped Beams1044 Compact Microwave Ion Sources105 Diversity of Available Ion Species106 Microwave Ion Sources for Commercial Implanters1061 Semiconductor Device Fabrication1062 SOI Wafer Fabrication107 Conclusion11 ECR Ion Sources (Daniela Leitner and Claude Lyneis)111 Introduction112 Brief History of the Development of ECR Ion Sources113 The LBNL ECR Ion Sources1131 The AECR-U Ion Source1132 The VENUS ECR Ion Source114 Physics and Operation of ECR Ion Sources1141 Electron Impact Ionization1142 Charge Exchange1143 Plasma Confinement1144 ECR Heating1145 Gas Mixing115 Design Considerations116 Microwave and Magnetic Field Technologies117 Metal Ion Beam Production1171 Direct Insertion1172 Sputtering1173 Gaseous or Volatile Compounds (MIVOC Method)1174 External Furnaces (Ovens)1175 Efficiencies118 Ion Beam Extraction from ECR Ion Sources1181 Influence of Magnetic Field and Ion Temperature on the Extracted Ion Beam Emittance1182 Influence of Plasma Confinement on Beam Emittance119 Conclusion12 Laser Ion Sources (Boris Sharkov)121 Introduction122 Basics of Laser Plasma Physics123 General Description1231 Laser Characteristics1232 Target Illumination System1233 Target Ensemble1234 Pulse Width and Target-Extractor Separation1235 Extraction System1236 Low Energy Beam Transport Line (LEBT)124 Beam Parameters1241 Current Profile1242 Charge State Distribution1243 Beam Emittance1244 Pulse Stability and Source Lifetime125 Sources at Accelerators1251 The LIS at ITEP-TWAC1252 The LIS at CERN1253 The LIS at JINR Dubna126 Other Operating Options1261 High Current, Low Charge State Mode1262 Influence of Magnetic Field on the Laser Ion Source Plasma127 Conclusion13 Vacuum Arc Ion Sources (Efim Oks and Ian Brown)131 Introduction132 Background133 Vacuum Arc Plasma Physics134 Principles of Operation135 Beam Parameters1351 Beam Current1352 Beam Profile, Divergence and Emittance1353 Beam Composition1354 Beam Noise, Pulse Stability, and Lifetime136 Recent Improvements in Parameters and Performance1361 Enhancement of Ion Charge States1362 Alternative Triggering of the Vacuum Arc1363 Reduction in Ion Beam Noise and Increased Pulse Stability1364 Generation of Gaseous Ions137 Source Embodiments1371 LBNL Mevva Sources1372 HCEI Titan Sources1373 NPI Raduga Sources1374 GSI Varis Sources1375 Other Versions and Variants138 Conclusion14 Negative Ion Sources (Junzo Ishikawa)141 Introduction142 Surface Effect Negative Ion Sources1421 Negative Ion Production by Surface Effect1422 Surface Effect Light Negative Ion Sources1423 Surface Effect Heavy Negative Ion Sources143 Volume Production Negative Ion Sources1431 Negative Ion Formation by Volume Production1432 History of Source Development1433 Recent Volume Production Negative Ion Sources144 Charge Transfer Negative Ion Sources1441 Negative Ion Production by Charge Transfer1442 History of Charge Transfer Negative Ion Sources145 Conclusion15 Ion Sources for Heavy Ion Fusion (Joe Kwan)151 Introduction1511 Heavy Ion Beam Driven Inertial Fusion1512 HIF Ion Source Requirements152 Beam Extraction and Transport1521 Scaling Laws for Beam Extraction and Transport1522 Large Beam vs Multiple Small Beamlets153 Surface Ionization Sources1531 Contact Ionizers1532 Aluminosilicate Sources1533 Surface Ionization Sources for HIF154 Gas Discharge Ion Sources for HIF155 Pulsed Discharge Sources1551 Metal Vapor Vacuum Arc Sources for HIF1581 Laser Ion Sources for HIF156 Negative Ion Sources for HIF157 HIF Injector Designs1571 Large Diameter Source Approach1572 Merging Multiple Beamlets Approach158 Conclusion16 Giant Ion Sources for Neutral Beams (Yasuhiko Takeiri)161 Introduction162 Large Volume Plasma Production1621 Bucket Plasma Sources with Multi-Cusp Magnetic Field1622 Plasma Modeling1623 Atomic Fraction163 Large Area Beam Extraction and Acceleration1631 Electrode Systems for Large Area Beams1632 Beamlet Steering164 Giant Positive Ion Sources165 Giant Negative Ion Sources1651 Operational Principles of Negative Ion Sources1652 Negative Ion Extraction and Acceleration1653 Giant Negative Ion Sources166 Future Directions of DevelopmentAppendicesAppendix 1: Physical ConstantsAppendix 2: Some Plasma ParametersAppendix 3: Table of the ElementsIndex

Handbook of ion beam processing technology

Abstract: The work presented in this book deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for the synthesis of material in thin form, and for the modification of the properties of thin films. The ion energy range covered is from a few tens of eV to about 10,000 eV, with primary interest in the range of about 20 to 1-2 keV, where implantation of the incident ion is a minor effect. Of the types of ion sources and devices available, this book examines principally broad beam ion sources, characterized by high fluxes and large work areas. These sources include the ECR ion source, the Kaufman-type single- and multiple-grid sources, gridless sources such as the Hall effect or closed-drift source, and hydrid sources such as the ionized cluster beam system.

Plasma source ion implantation: A new approach to ion beam modification of materials

Abstract: Plasma source ion implantation (PSII) is a nonline-of-sight technique for surface modification of materials which is optimized for ion implantation of non-planar targets in non-semiconductor applications. In PSII, targets to be implanted are placed directly in a plasma source chamber and are then pulse biased to high negative voltage (10–100 kV in our experiments). A thick ion matrix sheath forms around the target, and ions accelerate through the sheath drop and bombard the target from all sides simultaneously without the necessity of target manipulation. Compared with conventional ion implantation, PSII minimizes the problems of shadowing and excessive sputtering of the target material, which can severely limit the retained dose of the implanted ion species. PSII has demonstrated (1) efficient implantation of ions to the concentrations and depths required for surface modification, (2) dramatic improvement in the life of manufacturing tools in actual industrial applications, (3) acceptable dose uniformity on non-planar targets without target manipulation and (4) that such uniformity can be achieved in a batch-processing mode. An examination of the comparative economics of surface modification by PSII relative to conventional ion implantation indicates substantial reductions in operating costs, by virtue of the greater throughput possible with PSII.

Focused ion beam imaging and process control

Abstract: Ion beam machining apparatus utilizes a focused ion beam for sputtering a target, an electron source for charge neutralization of the target, photon detectors for detecting photo-emissions during sputtering, and an output module responsive to the photon detectors for locating the impingement site of the ion beam within the target, based on detection of transitions between different material constituents within the target. The focused ion beam can be scanned in selected patterns about a predetermined sputtering region of the target, and the output module can include imaging elements for generating an image of the target in response to detected photo-emissions.

Surface Figuring Using Neutral Ion Beams

Abstract: During recent years, economic and technological pressures have driven research for higher performance optical fabrication techniques. Among the candidate figuring technologies is ion beam sputtering in which material is removed from the optical surface by the kinetic interaction of ions and atoms or molecules of the surface. The first use of sputtering as a means for optical figuring occurred in the mid 1960's [1,2], and the technique has been investigated by several groups since that time. The prior work was done primarily with ion sources producing high energy (20KeV and above), low current (fraction of a milliampere), narrow (usually less than one millimeter) ion beams. The low current directly translates to low removal rates, while the high energy contributes to radiation damage, ion implantation, and other effects. In the present work the low current, high energy source is replaced with a Kaufman broad-beam ion source[3]. These sources produce higher ion currents at lower energies, thus giving faster removal with minimal surface damage. The ion beam produced by a Kaufman ion source consists of a number of ions traveling in a (typi-cally) slightly diverging beam, along with an equal flux of lower energy electrons. The electrons are injected into the ion beam to reduce electrostatic repulsion in the beam, but also to prevent the charging of dielectric targets.

Radio frequency ion beam source

Abstract: A monoenergetic ion source for the generation of an ion beam is described with the ion energies which lie below 100 eV and also above 5 keV being capable of being freely selected so that the whole range of intermediate energies and independently of the selected ion current density with the aid of the operating parameters of the source. The ion current density is so freely adjustable independently of the ion energy. The ion source is provided with an optical beam focussing system and can in particular also be used to produce metal ions. This ion source also makes a special coating process possible which is likewise described here.

Focused ion beam induced deposition of low‐resistivity gold films

Abstract: Focused ion beam induced deposition of metals has up to now produced films with resistivities 30–5000 times higher than bulk values for metals because of high concentrations of impurities from the precursor gas incorporated into the films. We have demonstrated for the first time deposition of submicron Au films with resistivities approaching that of the bulk metal and carbon contents of <10 at. %. These results are particularly relevant to applications in integrated circuit restructuring and x‐ray lithography mask repair, where high film conductivity and purity improves interconnect quality and x‐ray opacity.

Ion beam-plasma interaction: A standard model approach

Abstract: The interaction of energetic multicharged ion beams with separately produced target plasmas is investigated within a projectile-ion-target-electron bin

An MeV-ion implanter for large area applications

Abstract: A facility for MeV ion irradiation of large areas (10 × 10 cm2) is described. Irradiation with a variety of ion beams at fluences ranging from 108 to 1015 ions/cm2 can be conducted with less than 5% variation in dose. The system is presently used for charge-carrier lifetime control in semiconductors and for studies of thin film adhesion enhancement.

Plasma ion source mass spectrometer

Abstract: Disclosed is a plasma ion source mass spectrometer comprising an ion source in which a sample to be detected is ionized in plasma and a mass spectrometer which mass-separates and detects the ionized sample supplied from the ion source, characterized in that there is provided a gas introduction means for introducing into a region before the mass spectrometer a gas containing particles which can bring about a charge transfer reaction with background ions contained in particles supplied from the ion source or a gas containing particles which can bring about an energy transfer reaction with excited molecule contained in the particles supplied from the ion source. By providing such gas introduction means, background ions or excited molecule can be efficiently quenched and enhancement of sensitivity of plasma ion source mass spectrometer can be attained.

A new highly efficient selective laser ion source

Abstract: A new high-temperature resonant laser ion source is described to be used at on-line mass separators.

Development of a Compact Electron Beam Ion Source Cooled with Liquid Nitrogen

Abstract: A small-sized EBIS type ion source (mini-EBIS) for production of highly charged ions has been developed. The whole system, namely, the electron gun, ion drift tube, electron collector, ion extraction lens and liquid nitrogen reservoir containing solenoid coil is housed in a vacuum envelope, 150 mm in diameter and 500 mm in length. The idea of cooling the solenoid to 77 K has proved very effective to miniaturize the solenoid and its power supply. Moreover, the wall of the liquid nitrogen reservoir exhibits a cryogenic pumping function at the ionization region. In the DC ion extraction mode with an electron current of 15 mA at 2 keV, beam intensities obtained for C6+, N7+, O8+, Ne9+ and Ar16+ ions are at least 5×104, 3×104, 1×104, 5×103 and 3×103 counts per second, respectively.

YBa2Cu3O7-δ films deposited by a novel ion beam sputtering technique

Abstract: Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition system which features a rotating target holder with BaO2, CuO, and Y2O3 as the sputtering targets. The dwell time of the ion beam on each oxide target is determined by a computer‐controlled feedback loop using the signal from a programmable quartz crystal resonator. The sputtered fluxes of all film components originate from the same spatial location, ensuring homogeneous film composition. The results presented demonstrate for the first time an automated ion beam sputter deposition system with the capability of producing high Tc superconducting films by controlled sputtering of either elemental metallic components or oxide precursors. The concept may be extended to include processes such as patterning, production of layered structures (junctions), and film encapsulation necessary for microcircuit manufacturing based on high Tc superconducting films.

The characterization of an imaging time-of-flight secondary ion mass spectrometry instrument

Abstract: A detailed study has been made of the performance characteristics of a new imaging time‐of‐flight secondary ion mass spectrometer based on the Poschenrieder design and utilizing a 30‐kV gallium primary beam column. In spectral mode the maximum transmission and mass resolution have been measured and the relationship between transmission and mass resolution have been determined. The influence of primary pulse length, extraction voltage, and secondary ion mass on these parameters are described. A variety of materials have been used in the study, ranging from pure molybdenum, cesium iodide to insulating polymers such as poly (methylmethacrylate) and polystyrene. The influence of sample charging is discussed. The spatial resolution of the liquid metal ion beam in continuous and pulsed mode has been assessed and the performance of the imaging time‐of‐flight secondary ion mass spectrometry system is described using a model metal on silicon device. The use of the system in micrometer scale depth profiling is also described.

Particle beam irradiating apparatus having charge suppressing device which applies a bias voltage between a change suppressing particle beam source and the specimen

Abstract: A particle beam irradiating apparatus including a particle beam irradiating device for irradiating a charged particle beam such as ions or electrons to a specimen. A charged particle source is included for irradiating an electron beam to the specimen which is positively charged or an ion beam to the specimen which is negatively charged so as to neutralize the specimen, and a voltage supply is include for applying a bias voltage difference not more than 10 V between the charged particle source and the specimen. As the specimen is not charged with a high voltage, the specimen does not break down. The particle beam irradiating apparatus is effectively used in an electron microscope, an electron beam lithography system, an ion implanter, an ion microprobe analyzer, a secondary ion mass spectrometer.

On the mechanism of secondary ion formation from poly(methylmethacrylate) under static secondary ion mass spectrometry conditions

Abstract: The negative ion spectrum of a relatively thick layer (± 0. 5 μm) of poly(methylmethacrylate) (PMMA) with Mw = 1890 and its positive ion spectrum of a very thin layer (± 1. 0 nm) on silver measured with a time of flight secondary ion mass spectrometer are presented. From the negative ion spectrum it is concluded that formation of enolate anions from PMMA under static secondary ion mass spectrometric conditions is an important ion formation process. From fragmentation products of the polymer, detected as silver cationized species in the positive ion spectrum, more evidence was found of a fragmentation mechanism for PMMA under static secondary ion mass spectrometric conditions recently proposed in the literature. From the relation between the information obtained from the two types of spectra an extension of this mechanism is obtained. This mechanism implies scission of the polymer chain by the primary ion bombardment with subsequent formation of enolate anions from the newly formed polymer chain-ends.

Low‐temperature surface cleaning method using low‐energy reactive ionized species

Abstract: A new low‐temperature Si substrate surface cleaning method using low‐energy controlled ionized species produced from H2 or H2‐SiH4 electron‐cyclotron‐resonance plasma is described. This method is based on the reactive ion beam deposition technique, which opened up the possibility for lowering the crystalline Si film growth temperature. By irradiating the 50–300‐eV ionized species produced from H2‐SiH4 plasma onto the single‐crystal Si(111) and Si(100) substrates, thoroughly clean surfaces were obtained at the low temperature of 650 °C. These cleaned substrate surfaces exhibited superstructures, such as Si(111)‐7×7 and Si(100)‐two‐domain‐2×1.

Amorphous hydrogenated carbon films on semiconductors

Abstract: The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.

Plasma ion source mass spectrometer for trace elements

Abstract: A plasma ion source mass spectrometer for trace elements is provided with a plasma generating section, an ion beam generating section, an ion beam focusing section, an ion mass analyzer section and an ion detector section, is further provided with a resonance charge exchange reaction section and an ion energy analyzer section, both sections being disposed between the ion beam focusing section and the ion mass analyzer section and being constructed such that fast disturbing ions contained in the incident ion beam are transformed in the resonance charge exchange reaction section into fast neutral atoms (or molecules) and slow disturbing ion, and such that the fast neutral atoms (or molecules) and the slow disturbing ions described aboved are separated to be removed from the ions to be analyzed.

Focused ion beam apparatus having charged particle energy filter

Abstract: A focused ion beam apparatus which has a secondary electron energy filter apparatus. The secondary electron energy filter apparatus is basically composed of an extraction electrode for extracting secondary electrons generated from a sample by irradiating an ion beam thereon, and a grid electrode for discriminting the secondary electrons based on their energy levels. The focused ion beam apparatus is also equipped with a secondary electron detector for detecting secondary electrons which pass the grid electrode, thereby measuring the potential of the surface of the sample under treatment.

Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens

Abstract: An ion beam milling system for the preparation of transmission electron microscope specimens suitable for atomic resolution imaging, particularly of III-V and II-VI compound semiconductors and their alloys, is described. The system includes ion beam sources and reactive molecular gas jets which may be operated in combination or separately, as appropriate. A new heated specimen holder, giving greatly increased reaction rates with the molecular gas jet, allows milling angles very close to zero.

The application of ion beam bevel sectioning and post-sputter etch treatment in Auger crater-edge profiling

Abstract: A method of Auger crater-edge profiling is described that uses electronic contouring of the ion beam from a focused ion source for the sputter formation of bevelled cross-sections. Vanishingly shallow angles can be produced by this method, allowing high lateral magnification of layered structures with in-depth resolution equal to the best obtainable by conventional Auger profiling. The many advantages of this approach are discussed, together with details of a new approach for improving in-depth resolution. This entails post-treatment of the sputter-formed bevel using low-energy sputtering and chemically assisted reactive ion beam etching. The methods are demonstrated using samples of buried SiO2 in Si and InP/GaInAs superlattice structures.

Composite apparatus with secondary ion mass spectrometry instrument and scanning electron microscope

Abstract: A composite apparatus is disclosed which includes in combination a secondary ion mass spectrometry instrument and a scanning electron microscope. A liquid metal ion source and an ion source other than the liquid metal ion source are installed in the same apparatus so that an ion beam emitted from the liquid metal ion source and an ion beam emitted from the ion source other than the liquid metal ion source are aligned with each other on a primary beam axis which is an optical axis of an irradiating system. The liquid metal ion source is disposed in rear of a primary ion separating device which mass-separates the ion beam emitted from the ion source other than the liquid metal ion source. Further, an electron gun is installed in the same apparatus so that an electron beam emitted from the electron gun is aligned with the ion beam on the primary beam axis.

Advances in metal ion sources

Abstract: Beams of metallic ion species can be produced by the ECR (electron cyclotron resonance) ion source and by the MEVVA (metal vapor vacuum arc) ion source. Although the ECR source is fundamentally a gaseous ion source, metal ion beams can be produced by introducing metallic feed material into the plasma discharge using a number of techniques. The ion charge states can be very high, which is a significant advantage to most applications. The MEVVA ion source, on the other hand, is specifically a metal ion source. It has produced metallic ion beams from virtually all the solid metallic elements at a current of typically hundreds of milliamperes; the ions produced are in general multiply ionized, but not as highly stripped as those generated in the ECR source. Although the MEVVA source at present operates in a pulsed mode with a low duty cycle ( ≤ 1%), work is in progress to increase the duty cycle significantly. In this paper the operation and performance of the LBL ECR and MEVVA ion sources, with respect to metal ion generation, are described.

Focused Ion Beam Induced Deposition

Abstract: Ion induced deposition is a novel method of thin film growth in which a local gas ambient is created near an ion bombarded surface. The ion bombardment causes the gas molecules to break up and some of the gas constituents to deposit on the surface. If a focused ion beam is used, then this becomes a technique for maskless, resistless, patterned deposition. Depositions of films from gases of Al(CH3)3, WF6 and Ta(OC2H5)2 have been reported. The films for the most part have contained high (approaching 50%) concentrations of impurities such as O or C, presumably due to the lack of ultrahigh vacuum conditions. Gold deposition has been observed from dimethyl gold hexa fluoroacetylacetonate (C7 H7F6 O2 Au), with both focused ion beams and broad beams. In many cases, the gold films are much purer (less than 5% C or O) and have exhibited resistivities from 20 to 1000µΩcm (Bulk gold resistivity is 2.5µΩcm.) Deposition yields (atoms deposited per incident ion) of 4 to 100 have been observed. But the higher yields correlate with higher resistivity and higher impurity content. Preliminary transmission electron microscope examination shows the gold films to start out as unconnected islands of 40 to 60nm dimensions. The mechanisms for the deposition is at present not well understood. Some hypotheses will be discussed. Ion-induced deposition appears to be a promising technique for in-situ deposition of metals or insulators with submicrometer resolution.

Method and device for continuous-wave ion beam time-of-flight mass-spectrometric analysis

Abstract: A method for continuous-wave ion beam time-of-flight mass-spectrometric analysis implemented by a corresponding device provides for directing a continuous-wave ion beam from an ion source (6) onto a means for periodical emission of ions with different mass of an ion modulator (2) in a direction perpendicular to the ion drift space (18). Then a periodical pulsed modulation of the ions with different mass is effected by means of successive accumulation of ions in the modulator (2) during the time of flight of the ions with the heaviest mass through the zone of their accumulation, and expulsion of ions with different mass by a means (7) for expulsion of ions with different mass of the ion modulator (2) from the zone of accumulation of ions with different mass, with simultaneous discontinuation of the continuous-wave beam of ions with different mass by a means (3) for periodical emission of ions with different mass for a time of their expulsion, and with subsequent acceleration of ions with different mass by a means (10) for acceleration of ions of different mass of the ion modulator (2) towards the ion drift space (18). Then packets of ions with the same mass are registered by means of an ion registration unit (21).

Multiply charged metal ion beams

Abstract: The metal vapor vacuum arc is a prolific generator of highly ionized metal plasma in which the ions are in general multiply stripped. We have utilized this plasma production mechanism to make a high current metal ion source. The metal vapor vacuum arc ion source is thus a laboratory tool for providing high quality, high current beams of a wide range of metal ion species. Charge state spectra have been measured using a time-of-flight diagnostic. In this paper we review the ion source development program, describe the various embodiments of the concept that have been made, and summarize those experimental results relating to the ion charge states that can be produced.

Focusing ion beam device

Abstract: PURPOSE: To improve a property of focusing an ion beam, further to make the ion beam capable incidence upon a desired position, by projecting an electron beam in the periphery of an ion incident point in order to neutralize a charge due to the ion beam incident upon a sample, and eliminating an influence by an electric charge with which the sample is charged. CONSTITUTION: An ion, extracted by an extracting electrode 2 from an ion source 1, is focused by an electrostatic lens 5. A focusing ion beam 6 is deflected by a deflecting plate 7 and scanned on a surface of a sample 9 on a stage 8. An outgoing electron from an electron gun 14 is changed in a low energy electron beam 15 by an acceleration power supply 16, to form a sharp electron spot surrounding an ion beam incident point 10. A filament power supply 17 is controlled through a multiplexer control power supply 19 from a computer 18. A secondary electron 25 or secondary ion 26, emitted from the sample 9, is accelerated to hit a mesh electrode 21, and generated secondary electron 27 is further accelerated to hit a phosphor 22, so that fluorescence is detected by a photomultiplier 23 to input a detection output to the computer 18. At irradiation time of the electron beam 15, negative voltage is applied to an electrode 21 through a bias control power supply 24. COPYRIGHT: (C)1995,JPO