C
Chandra Mouli
Researcher at Micron Technology
Publications - 216
Citations - 3356
Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.
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Patent
Transistor having vertical junction edge and method of manufacturing the same
Fernando Gonzalez,Chandra Mouli +1 more
TL;DR: In this article, shallow trenches are formed in a substrate and filled with an oxide, such as a heavily doped polysilicon, such that during a thermal cycle, the heavily-polysilicon will out-diffuse doping elements into the adjacent single crystal silicon advantageously forming a diode extension having desirable properties.
Patent
Methods of cooling semiconductor dies
Chandra Mouli,Gurtej S. Sandhu +1 more
TL;DR: In this paper, the authors present a method for cooling a semiconductor die in which coolant is forced through grooves in a backside of the die, and includes methods of making semiconductor packages utilizing carbon nanostructures (such as carbon nanotubes) as thermally conductive interface materials.
Patent
JFET devices with increased barrier height and methods of making same
TL;DR: In this article, the authors present devices and methods for providing JFET transistors with improved operating characteristics, such as a higher diode turn-on voltage and a doped silicon-carbide gate.
Patent
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
TL;DR: In this paper, the transistors are a first transistor and a second transistor, and the capacitance is a second capacitor, coupled with a source/drain region of the first transistor.
Patent
Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material, and Methods of Forming Integrated Structures
TL;DR: In this article, an integrated structure having vertically-stacked conductive levels is proposed, where the lower conductive level is a select device level and the upper conductive layer is a memory cell level.