F
F. Fournel
Researcher at Alternatives
Publications - 50
Citations - 745
F. Fournel is an academic researcher from Alternatives. The author has contributed to research in topics: Wafer & Wafer bonding. The author has an hindex of 12, co-authored 31 publications receiving 622 citations.
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Proceedings ArticleDOI
3DVLSI with CoolCube process: An alternative path to scaling
Perrine Batude,Claire Fenouillet-Beranger,L. Pasini,V. Lu,F. Deprat,Laurent Brunet,Benoit Sklenard,F. Piegas-Luce,M. Casse,B. Mathieu,O. Billoint,G. Cibrario,Ogun Turkyilmaz,Hossam Sarhan,Sebastien Thuries,Louis Hutin,S. Sollier,Julie Widiez,L. Hortemel,Claude Tabone,M.-P. Samson,Bernard Previtali,N. Rambal,F. Ponthenier,J. Mazurier,Remi Beneyton,M. Bidaud,Emmanuel Josse,E. Petitprez,O. Rozeau,Maurice Rivoire,C. Euvard-Colnat,A. Seignard,F. Fournel,L. Benaissa,Perceval Coudrain,P. Leduc,J.M. Hartmann,Pascal Besson,Sebastien Kerdiles,C. Bout,Fabrice Nemouchi,A. Royer,C. Agraffeil,G. Ghibaudo,Thomas Signamarcheix,Michel Haond,Fabien Clermidy,O. Faynot,Maud Vinet +49 more
TL;DR: In this paper, the authors propose a 3D VLSI with a CoolCube integration to vertically stack several layers of devices with a unique connecting via density above a million/mm2.
Journal ArticleDOI
Hydrophilic low-temperature direct wafer bonding
TL;DR: In this article, the sealing mechanism of silicon bonding interfaces is reported as a function of annealing temperature, and details of the structural and chemical interface evolution are obtained for hydrophilic silicon/silicon and silicon-silicon dioxide wafer bonding, using x-ray reflectivity and infrared spectroscopy.
Journal ArticleDOI
Transfers of 2-inch GaN films onto sapphire substrates using Smart CutTM technology
Aurélie Tauzin,Takeshi Akatsu,Marc Rabarot,Jerome Dechamp,M. Zussy,Hubert Moriceau,Jean Francois Michaud,Anne-Marie Charvet,L. Di Cioccio,F. Fournel,J. Garrione,Bruce Faure,Fabrice Letertre,N. Kernevez +13 more
TL;DR: For the first time, transfer of thin GaN films by means of Smart Cut technology was demonstrated in this paper, where full wafer transfer of a 2-inch GaN layer from its original substrate onto a carrier sapphire wafer was reported.
Journal ArticleDOI
Overview of recent direct wafer bonding advances and applications
Hubert Moriceau,Francois Rieutord,F. Fournel,Y. Le Tiec,L. Di Cioccio,Christophe Morales,Anne-Marie Charvet,Chrystel Deguet +7 more
TL;DR: In this paper, the authors give an overview of Si and SiO2 direct wafer bonding processes and mechanisms, silicon-on-insulator type bonding, diverse material stacking and the transfer of devices.
Proceedings ArticleDOI
3D Sequential Integration: Application-driven technological achievements and guidelines
Perrine Batude,Laurent Brunet,C. Fenouillet-Beranger,Francois Andrieu,J.-P. Colinge,Didier Lattard,E. Vianello,Sebastien Thuries,O. Billoint,Pascal Vivet,Cristiano Santos,B. Mathieu,Benoit Sklenard,C.-M. V. Lu,J. Micout,F. Deprat,E. Avelar Mercado,F. Ponthenier,N. Rambal,M.-P. Samson,M. Casse,Sebastien Hentz,Julien Arcamone,Gilles Sicard,Louis Hutin,L. Pasini,A. Ayres,O. Rozeau,R. Berthelon,Fabrice Nemouchi,Philippe Rodriguez,J.-B. Pin,D. Larmagnac,A. Duboust,V. Ripoche,S. Barraud,N. Allouti,Sébastien Barnola,C. Vizioz,J.M. Hartmann,Sebastien Kerdiles,P. Acosta Alba,S. Beaurepaire,V. Beugin,F. Fournel,Pascal Besson,Virginie Loup,R. Gassilloud,François Martin,X. Garros,Frédéric Mazen,Bernard Previtali,C. Euvrard-Colnat,V. Balan,C. Comboroure,M. Zussy,Mazzocchi,O. Faynot,M. Vinet +58 more
TL;DR: 3D Sequential Integration with ultra-small 3D contact pitch with Ultra-Low TB FETs has potential for low-power applications and allow for the stacking of multiple layers.