Probability Distributions.- Linear Models for Regression.- Linear Models for Classification.- Neural Networks.- Kernel Methods.- Sparse Kernel Machines.- Graphical Models.- Mixture Models and EM.- Approximate Inference.- Sampling Methods.- Continuous Latent Variables.- Sequential Data.- Combining Models.

Pattern Recognition and Machine Learning

https://users.encs.concordia.ca/~ymzhang/publications/ARC32-2-98Zhang_pp.229-252.pdf

Bibliographical review on reconfigurable fault-tolerant control systems

This ebook is the first authorized digital version of Kernighan and Ritchie's 1988 classic, The C Programming Language (2nd Ed.). One of the best-selling programming books published in the last fifty years, "K&R" has been called everything from the "bible" to "a landmark in computer science" and it has influenced generations of programmers. Available now for all leading ebook platforms, this concise and beautifully written text is a "must-have" reference for every serious programmers digital library.

As modestly described by the authors in the Preface to the First Edition, this "is not an introductory programming manual; it assumes some familiarity with basic programming concepts like variables, assignment statements, loops, and functions. Nonetheless, a novice programmer should be able to read along and pick up the language, although access to a more knowledgeable colleague will help."

The C programming language

With advanced computer technology, systems are getting larger to fulfill more complicated tasks: however, they are also becoming less reliable. Consequently, testing is an indispensable part of system design and implementation; yet it has proved to be a formidable task for complex systems. This motivates the study of testing finite stare machines to ensure the correct functioning of systems and to discover aspects of their behavior. A finite state machine contains a finite number of states and produces outputs on state transitions after receiving inputs. Finite state machines are widely used to model systems in diverse areas, including sequential circuits, certain types of programs, and, more recently, communication protocols. In a testing problem we have a machine about which we lack some information; we would like to deduce this information by providing a sequence of inputs to the machine and observing the outputs produced. Because of its practical importance and theoretical interest, the problem of testing finite state machines has been studied in different areas and at various times. The earliest published literature on this topic dates back to the 1950's. Activities in the 1960's mid early 1970's were motivated mainly by automata theory and sequential circuit testing. The area seemed to have mostly died down until a few years ago when the testing problem was resurrected and is now being studied anew due to its applications to conformance testing of communication protocols. While some old problems which had been open for decades were resolved recently, new concepts and more intriguing problems from new applications emerge. We review the fundamental problems in testing finite state machines and techniques for solving these problems, tracing progress in the area from its inception to the present and the stare of the art. In addition, we discuss extensions of finite state machines and some other topics related to testing.

Principles and methods of testing finite state machines-a survey

Ultrathin films of single-walled carbon nanotubes (SWNTs) represent an attractive, emerging class of material, with properties that can approach the exceptional electrical, mechanical, and optical characteristics of individual SWNTs, in a format that, unlike isolated tubes, is readily suitable for scalable integration into devices. These features suggest the potential for realistic applications as conducting or semiconducting layers in diverse types of electronic, optoelectronic and sensor systems. This article reviews recent advances in assembly techniques for forming such films, modeling and experimental work that reveals their collective properties, and engineering aspects of implementation in sensors and in electronic devices and circuits with various levels of complexity. A concluding discussion provides some perspectives on possibilities for future work in fundamental and applied aspects.

http://www.ifc.dicp.ac.cn/library/cailiao/pdf1/11.pdf

Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

Long Short-Term Memory (LSTM) has been widely adopted in many sequential applications, such as language model and speech recognition. LSTM usually incurs in a large memory requirement and high computational complexity. Therefore, LSTM has a limited applicability to embedded and mobile systems. In LSTM, a large number of operations and high storage are required for matrix-vector multiplication (MV). In this paper, we present a software and hardware co-design scheme for efficiently compressing MVs. By utilizing a structured matrix, quantization and selective top-k pruning, memory requirements are substantially reduced while only incurring in a negligible accuracy loss. Then, a block-parallel hardware architecture is proposed for the compressed LSTM. As requiring less multiplication operations and storage resources, the proposed architecture achieves the very good compression ratio. The proposed architecture is implemented on the Xilinx VCU118 and KC705 platforms. Experimental results show that the proposed design uses less DSP and BRAM resources.

DC-LSTM: Deep Compressed LSTM with Low Bit-Width and Structured Matrices

Testing and diagnosis of VLSI and ULSI

The carbon nanotube field-effect transistor (CNTFET) is a promising device to supersede the MOSFET at the end of the technology roadmap of the CMOS. When designing and manufacturing a CNTFET, additional features such as pitch, number, and position of the CNTs must be considered to assess its performance. One of the defect types that can occur when fabricating a CNTFET is the absence of some CNTs following the deposition/growth step. As a result of this type of defect, a CNTFET will show a change in operational characteristics because the drain current, gate capacitance, and delay will be affected due to the lower number of CNTs with uneven spacing between them present in the channel of the transistor. This paper presents a new model by which the drain current, the gate capacitance, and the delay can be found when not all CNTs are deposited on the substrate. This results in an uneven CNT spacing in the channel; new equations are derived and shown to be applicable to both defective and defect-free CNTFETs. The proposed model has been implemented in MATLAB and has been extensively simulated to show that defects due to undeposited CNTs have a significant impact on the operation of a CNTFET. Delay as degradation in performance is shown to be related to both the number and position of the defects; an extensive delay analysis on both deterministic and probabilistic basis is presented.

Modeling Undeposited CNTs for CNTFET Operation

A model that captures the physical phenomena behind the operation of organic solar cells is proposed. This model is simple and suitable for parameter extraction. By simulation, it is shown that the I-V characteristics of the single diode model, the double diode model and the proposed model are in good agreement and close to experimental values. An extraction method is proposed and validated by fitting simulated and experimental results.

Modelling and extracting parameters of organic solar cells

This paper analyzes and improves the performance of a hybrid memory cell consisting of a memristor and ambipolar transistors. This work extends a previous design by efficiently biasing the memristor (as controlled by the ambipolar transistors), such that no refresh operation is now required. By utilizing macroscopic models, the features of the cell are characterized for the memory operations and no modification is needed to the cell circuit other than the memristor biasing scheme. A detailed treatment of the memory cell with respect to the new biasing scheme of the memristor is provided. Simulation results show that the proposed memory cell has superior performance compared with the previous memristor-based cell.

/pdf/a-memristor-based-memory-cell-with-no-refresh-17vir0rcq0.pdf

Fabrizio Lombardi

Papers

DC-LSTM: Deep Compressed LSTM with Low Bit-Width and Structured Matrices

Testing and diagnosis of VLSI and ULSI

Modeling Undeposited CNTs for CNTFET Operation

Modelling and extracting parameters of organic solar cells

A memristor-based memory cell with no refresh