F
Fabrizio Lombardi
Researcher at Northeastern University
Publications - 677
Citations - 12743
Fabrizio Lombardi is an academic researcher from Northeastern University. The author has contributed to research in topics: Fault detection and isolation & Redundancy (engineering). The author has an hindex of 51, co-authored 639 publications receiving 10357 citations. Previous affiliations of Fabrizio Lombardi include Helsinki University of Technology & Fudan University.
Papers
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Journal ArticleDOI
Design and Evaluation of Low-Complexity Radiation Hardened CMOS Latch for Double-Node Upset Tolerance
TL;DR: A novel low-complexity (with respect to hardware redundancy in terms of area, delay, and power) radiation hardened (RH) latch is proposed; this latch is based on the dual interlocked storage cell (DICE) and can effectively reduce the number of protected nodes (sensitive nodes), as well as theNumber of transistors, thus reducing circuit overhead.
Journal ArticleDOI
An Energy-Efficient and Noise-Tolerant Recurrent Neural Network Using Stochastic Computing
TL;DR: In this SC-RNN, a hybrid structure is developed by utilizing SC designs and binary circuits to improve the hardware efficiency without significant loss of accuracy and achieves a higher noise tolerance compared to binary implementations.
Journal ArticleDOI
A model for computing and energy dissipation of molecular QCA devices and circuits
TL;DR: A new mechanical-based model for computing in QCA is presented, which offers a classical view of the principles of QCA operation and can be used in evaluating energy dissipation for reversible computing.
Proceedings ArticleDOI
A row-based FPGA for single and multiple stuck-at fault detection
TL;DR: The single fault test set is modifies to accomplish multiple fault detection under two multiple fault models: the multiple fault single module (MFSM) and the single fault multiple module (SFMM) models.
Proceedings ArticleDOI
Macromodeling a phase change memory (PCM) cell by HSPICE
TL;DR: This paper presents a HSPICE macromodel of a phase change memory (PCM) cell that simulates not only the resistance change by phase, but also the temperature profile, the crystalline fraction during the programming and the drift behavior in resistance and threshold voltage.