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Seongjae Cho

Researcher at Gachon University

Publications -  242
Citations -  2634

Seongjae Cho is an academic researcher from Gachon University. The author has contributed to research in topics: Transistor & Flash memory. The author has an hindex of 22, co-authored 241 publications receiving 2081 citations. Previous affiliations of Seongjae Cho include Stanford University & Seoul National University.

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LiteBIRD: A Satellite for the Studies of B-Mode Polarization and Inflation from Cosmic Background Radiation Detection

Masashi Hazumi, +164 more
TL;DR: LiteBIRD as mentioned in this paper is a candidate satellite for a strategic large mission of JAXA, which aims to map the polarization of the cosmic microwave background radiation over the full sky with unprecedented precision.
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RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

TL;DR: In this article, the authors presented a radiofrequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field effect transistors (MOSFETs) using a 3D device simulator.
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The LiteBIRD Satellite Mission - Sub-Kelvin Instrument

A. Suzuki, +166 more
TL;DR: LiteBIRD as mentioned in this paper is a satellite mission with a goal of detecting degree-and larger-angular-scale B-mode polarization, which is the leading theory of the first instant of the universe.
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Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

TL;DR: In this paper, the small-signal parameters of gate-all-around tunneling field effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length.
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Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

TL;DR: In this article, a bipolar resistive-switching random access memory (RRAM) in Ni/Si3N4/SiO2/p+Si structure and its fabrication process are demonstrated.