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Wolfgang Fichtner
Researcher at ETH Zurich
Publications - 403
Citations - 10716
Wolfgang Fichtner is an academic researcher from ETH Zurich. The author has contributed to research in topics: Very-large-scale integration & Power semiconductor device. The author has an hindex of 48, co-authored 401 publications receiving 10251 citations. Previous affiliations of Wolfgang Fichtner include Bell Labs & École Polytechnique Fédérale de Lausanne.
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Journal ArticleDOI
Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices
TL;DR: In this paper, a domain decomposition approach to tunneling transport is presented, which extends the range of applicability of the Domain Decomposition (DDC) approach for tunneling and enables the simulation of geometrically confined semiconductor quantum dots surrounded by very thin layers of dielectric or quantum dots.
Journal Article
Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation( the IEEE International Conference on SISPAD '02)
TL;DR: In this paper, the self-consistent single-particle approach (SPARTA) was used for the simulation of nanoscale MOSFETs where quasi-ballistic transport is crucial for the on-current.
Proceedings ArticleDOI
Hardware implementations of the SHA-3 candidates Shabal and CubeHash
TL;DR: This work intends to complement the specifications of the candidates Shabal and CubeHash by investigating their suitability for both high-speed and low-area VLSI implementations, as SHA-3 is expected to be implemented in many resource-constrained applications.
Proceedings ArticleDOI
Integrated Compact Modelling of a Planar-Gate Non-Punch-Through 3.3kV-1200A IGBT Module for Insightful Analysis and Realistic Interpretation of the Failure Mechanisms
TL;DR: In this article, a comprehensive electrothermal model development of a multi-chip IGBT power assembly is proposed for reliability investigations, which is based on a mixed physical and behavioral description approach and includes all basic and secondary electro-thermal effects.
Proceedings ArticleDOI
A novel Monte Carlo simulation code for linewidth measurement in critical dimension scanning electron microscopy
TL;DR: In this paper, a novel Monte Carlo simulation code based on the energy straggling principle is presented, which includes original physical models for electron scattering, the use of a standard Monte Carlo code for tracking and scoring, and the coupling with a numerical device simulator to calculate charging effects.