Y
Ying-Ho Chen
Researcher at National Taiwan University
Publications - 3
Citations - 315
Ying-Ho Chen is an academic researcher from National Taiwan University. The author has contributed to research in topics: MOSFET & Leakage (electronics). The author has an hindex of 2, co-authored 3 publications receiving 303 citations.
Papers
More filters
Proceedings ArticleDOI
5nm-gate nanowire FinFET
Fu-Liang Yang,Di-Hong Lee,Hou-Yu Chen,Chang-Yun Chang,Sheng-Da Liu,Cheng-Chuan Huang,Tang-Xuan Chung,Hung-Wei Chen,Chien-Chao Huang,Yi-Hsuan Liu,C.C. Wu,Chi-Chun Chen,Shih-Chang Chen,Ying-Tsung Chen,Ying-Ho Chen,C.H. Chen,Bor-Wen Chan,Peng-Fu Hsu,Jyu-Horng Shieh,Han-Jan Tao,Yee-Chia Yeo,Yiming Li,Jam-Wem Lee,Pu Chen,Mong-Song Liang,Chenming Hu +25 more
TL;DR: In this paper, a new nanowire FinFET structure was developed for CMOS device scaling into the sub-10 nm regime, and gate delay of 0.22 and 0.48 ps with excellent sub-threshold characteristics were achieved with very low off leakage cur-rent less than 10 nA/ /spl mu/m.
Proceedings ArticleDOI
A 65nm node strained SOI technology with slim spacer
Fu-Liang Yang,Chien-Chao Huang,Hou-Yu Chen,Jhon-Jhy Liaw,Tang-Xuan Chung,Hung-Wei Chen,Chang-Yun Chang,Cheng Chuan Huang,Kuang-Hsin Chen,Di-Hong Lee,Hsun-Chih Tsao,Cheng-Kuo Wen,Shui-Ming Cheng,Yi-Ming Sheu,Ke-Wei Su,Chi-Chun Chen,Tze-Liang Lee,Shih-Chang Chen,C.H. Chen,Cheng-hung Chang,Jhi-cheng Lu,W. Chang,Chuan-Ping Hou,Ying-Ho Chen,Kuei-Shun Chen,Ming Lu,Li-Wei Kung,Yu-Jun Chou,Fu-Jye Liang,Jan-Wen You,King-Chang Shu,Bin-Chang Chang,Jaw-Jung Shin,Chun-Kuang Chen,Tsai-Sheng Gau,Bor-Wen Chan,Yi-Chun Huang,Han-Jan Tao,J.H. Chen,Yung-Shun Chen,Yee-Chia Yeo,Samuel Fung,Carlos H. Diaz,Chii-Ming Wu,Burn-Jeng Lin,Liang Min-Chang,J.Y.-C. Sun,Chenming Hu +47 more
TL;DR: In this article, a 65 nm node strained SOI technology with high performance is demonstrated, providing drive currents of 1015 and 500 /spl mu/A/A//spl µ/m for N-FETs and P-Fet, respectively, at an off-state leakage of 40 nA/spl μ/m using 1 V operation.
Proceedings ArticleDOI
EUV degradation of high performance Ge MOSFETs
Ying-Ho Chen,Hung-Chih Chang,I-Hsieh Wong,Chang-Hsien Lin,H.-C Sun,H.-J Ciou,W.-T Yeh,S.-J Lo,Chee-Wee Liu,Chenming Hu,Fu-Liang Yang +10 more
TL;DR: In this paper, the degradation of threshold voltage, subthreshold swing, and channel mobility is attributed to the generation of interface traps and oxide fixed charges, leading to the reduction of current on/off ratio.