Sir Padampat Singhania University

About: Sir Padampat Singhania University is a education organization based out in Udaipur, India. It is known for research contribution in the topics: Diesel fuel & Encryption. The organization has 124 authors who have published 228 publications receiving 2066 citations. The organization is also known as: SPSU.

An Enhanced Approach to Infer Potential Host of Coronavirus by Analyzing Its Spike Genes Using Multilayer Artificial Neural Network

Abstract: Numerous coronaviruses are capable of transmitting interspecies. In recent years, transmission of coronavirus created a panic situation in the whole world. Therefore it is very important to infer the potential host of coro- navirus. In this research work nineteen parameters computed from the spike genes of coronavirus has been analysed to infer the potential host of coron- avirus. An enhanced multilayer neural network approach is proposed to analyse the data. The proposed model is compared with the other exiting statistical predictors like decision tree predictor, Support vector machine predictor and PNN predictor. All the model shown the higher accuracy such as 82.051 % by SVM predictor, 85.256% by PNN predictor,94.872% by decision tree predictor, and the highest accuracy 95.% is shown by proposed Multilayer Perceptron Predictor.

XBRL Acceptance in India: A Behavioral Study

Abstract: XBRL is fast becoming the new paradigm for reporting of financial information digitally. XBRL brings structure to business information with comprehensive description and contextual information for advanced analysis. It enhances the efficiency of financial reporting, accuracy, timeliness and reliability of financial data. Many Indian companies still resist using it. The present research uses technology acceptance model to analyze the perception of financial experts in respect of acceptance of XBRL as reporting method. The result revealed that using XBRL increases productivity but interacting with the XBRL requires lot of mental efforts. These findings can be an empirical and theoretical foundation to accelerate the adoption of XBRL in India.

Electron Impact Ionization Cross Sections of Tungsten Atoms and Tungsten Ions

Abstract: Ghanshyam PUROHIT1,2), Daiji KATO1,3,4) and Izumi MURAKAMI1,3) 1)National Institute for Fusion Science, National Institutes of Natural Sciences, 322-6 Oroshi-cho, Toki, Gifu 509-5292, Japan 2)Department of Physics, Sir Padampat Singhania University, Bhatewar, Udaipur-313601, India 3)Department of Fusion Science, SOKENDAI, 322-6 Oroshi-cho, Toki, Gifu 509-5292, Japan 4)Department of Advanced Energy Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Performance Evaluation of GaN Based Thin Film Transistor using TCAD Simulation

Abstract: As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10 7 ~8.3×10 8 , and a sub-threshold slope of 0.44V/dec. Sentaurus TCAD simulations is the tool which offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.